参数资料
| 型号： | ISL24021IRT065Z |
| 厂商： | Intersil |
| 文件页数： | 6/13页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP RRIO 1A 25MHZ 8-TDFN |
| 标准包装： | 100 |
| 放大器类型： | 电压反馈 |
| 电路数： | 1 |
| 输出类型： | 满摆幅 |
| 转换速率： | 19 V/µs |
| -3db带宽： | 27MHz |
| 电流 - 输入偏压： | 2nA |
| 电压 - 输入偏移： | 1400µV |
| 电流 - 电源： | 2.2mA |
| 电流 - 输出 / 通道： | 300mA |
| 电压 - 电源，单路/双路(±)： | 4.5 V ~ 19 V，±2.25 V ~ 9.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-TDFN（3x3） |
| 包装： | 管件 |
ISL24021
2
FN6637.1
October 18, 2011
Absolute Maximum Ratings (TA = +25°C)
Thermal Information
Supply Voltage Range (VDD -VSS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19.8V
Input Voltage Range (INN, INP). . . . . . . . . . . . . . . . . VSS - 0.5V, VDD + 0.5V
Input Differential Voltage (INP - INN) . . . . . . . . . .(VDD + 0.5V) - (VSS - 0.5V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7500V
Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Thermal Resistance (Typical)
θJA (°C/W)
θJC (°C/W)
8 Ld TDFN Package (Notes 4, 5). . . . . . . . .
50
17
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see Figure 28
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. For
θJC, the "case temp" location is the center of the ceramic on the package underside.
Electrical Specifications
VDD = 5V, VSS = -5V, RL = 1kΩ to 0V, TA = +25°C, Unless Otherwise Specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
(Note 6)
TYP
MAX
(Note 6)
UNIT
POWER SUPPLY PERFORMANCE
VDD - VSS
Supply Voltage Range
4.5
19
V
IS
Supply Current
No load
2.1
2.8
mA
PSRR
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±9.5V
60
80
dB
INPUT CHARACTERISTICS
VOS
Input Offset Voltage
VCM = 0V
1.4
15
mV
TCVOS
Average Offset Voltage Drift (Note 7)
1
V/°C
ILEAK
Input Leakage Current
VCM = 0V
2
10
nA
RIN
Input Resistance
1G
Ω
CIN
Input Capacitance
2pF
CMIR
Common-Mode Input Range
VSS-
0.5
VDD+
0.5
V
CMRR
Common-Mode Rejection Ratio
For VIN from -5.5V to 5.5V
50
70
dB
AVOL
Open-Loop Gain
-4.5V
≤ VOUT ≤ 4.5V
75
100
dB
OUTPUT CHARACTERISTICS
VOH
Output Swing High
IL= 5mA, VIN = VDD
VDD-
0.15
VDD-
0.025
V
VOL
Output Swing Low
IL= -5mA,VIN = VSS
VSS+
0.025
VSS+
0.15
V
ISC
Short-Circuit Current
±1.0
A
IOUT
Continuous Output Current (Note 10)
±300
mA
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 8)
-4.0V
≤ VOUT ≤ 4.0V
18
V/s
tS
Settling to 0.1% (Note 9)
AV = +1, VO = 2V step
80
ns
BW
-3dB Bandwidth
AV = +1, RL = 1kΩ, CL= 8pF
25
MHz
PM
Phase Margin
RL = 1kΩ, CL= 8pF
44
°
THERMAL PERFORMANCE
TTS
Thermal Shutdown Temperature
Die temperature at which the device will
shutdown until it cools by TTSH °C
+165
°C
TTSH
Thermal Shutdown Hysteresis
Die temperature below TTS °C when the
device will become operational after
shutdown
15
°C
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