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参数资料
| 型号： | ISL5239KIZ |
| 厂商： | INTERSIL CORP |
| 元件分类： | 消费家电 |
| 英文描述： | Pre-Distortion Linearizer |
| 中文描述： | SPECIALTY CONSUMER CIRCUIT, PBGA196 |
| 封装： | 15 X 15 MM, ROHS COMPLIANT, PLASTIC, BGA-196 |
| 文件页数： | 10/31页 |
| 文件大小： | 653K |
| 代理商： | ISL5239KIZ |
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10
cross-coupled term on both the I and Q channels. Typical
implementation is as shown in Figure 10.
The Output formatter also provides DC offset correction to
1/4 LSB for 18-bit outputs to reduce analog DC offsets
introduced in external D/A conversion and modulation
circuits which can degrade system performance by causing
carrier feed through in complex baseband systems, or spurs
at DC for IF systems.
The ODC also provides programmable output precision 8 to
18-bits, with unbiased (convergent) rounding, since practical
system designs will require D/A converters with fewer than
18-bits. Internal accuracy is in excess of 18-bits, and utilizes
20-bit data paths in critical areas. Additionally, both two’s
complement and offset binary formats are supported.
Capture Memory (CM)
The Capture Memory allows the capture and viewing of data
from various points in the chip. The primary function is to
capture the digital signals coming into the pre-distorter. The
CM also provides a secondary mode, as it can provide
stimulus directly to the pre-Distorter. The CM is comprised of
both the Input and the Feedback Memories. The processor
interface provides the access to view, input, and alter the
memory data. Synchronized (triggered) capture of both input
and feedback signals is a typical requirement of adaptive
digital pre-distortion systems.
Input Memory
The input capture memory observes the signals going into
the amplifier. The 2K deep memory grabs complex samples
of data at one of three possible locations, either at the input
to the pre-distorter, the output of the pre-distorter, or from its
magnitude calculation. In addition to capturing input data,
this memory may also be configured as a data source. The
input capture memory may be pre-loaded with user defined
data and ‘played’ into the pre-distorter to stimulate the
system with signals that will elicit a desired response.
Feedback Memory
The feedback memory allows the user to capture data from
an external system and to view the memory through the
processor interface. The feedback memory is used to
observe the signals coming out of the amplifier. The 1K deep
memory grabs 20-bit data, either in parallel or serial format.
The feedback capture memory has its own clock input,
FBCLK, which must be synchronously derived from CLK and
meet the timing requirements.
Capture operations may be triggered by an external signal
(TRIGIN), by magnitude threshold crossings detection
programmed in the magnitude threshold maximum and
minimum values, or by system software writing to the
processor trigger bit in control word 0x04, bit 6. Separate
programmable delays of up to 32k samples are provided for
both input memory and feedback capture, allowing system
delays to be calibrated out for optimum alignment prior to
analysis. A TRIGOUT output is provided to indicates when a
capture operation has begun.
The processor interface to the capture memories is designed
to minimize the time required for loading/unloading. Although
access to the memories takes place through indirect address
and data registers, auto incrementing of the address is
supported so the address only needs to be written once to
access the entire memory. The capture memory is as shown
in Figure 13.
Memory Modes and Programming Instructions
Unless noted, the following discussion applies to both the
input memory and feedback memory operations. Prior to
invoking the memory to capture or send data, the control
word 0x06, bits 14:0 input trigger delay counter, 0x08 bits
14:0 feedback trigger delay count, 0x05, bits 10:0 input
length, 0x04, bits 2:1 input memory datain source or 0x04,
bit 8 feedback input format, and 0x04, bits 5:4 trigger select
registers must be loaded.
FIGURE 11. IMBALANCE CORRECTION
FIGURE 12. CAPTURE MEMORY BLOCK DIAGRAM
MEMORY SELECT
FB DELAY COUNT
uP INTERFACE
INPUT
CAPTURE
MEMORY 2K
ADDR
DATA
FEEDBACK
CAPTURE
MEMORY 1K
FORMAT
FB<19:0>
FBCLK
uP
FB
STATE
TRIG
DATA
ADDR
INPUT
STATE
uP
INPUT
SEL
IFC I,Q
PD I,Q
PD MAG
TRIGIN
MAG COMP
uP
TRIG SEL
INPUT DELAY
COUNT
CM TEST I,Q
ISL5239
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| ISL5314IN | 功能描述:IC SYNTHESIZER DIGITAL 48-MQFP RoHS:否 类别:集成电路 (IC) >> 接口 - 直接数字合成 (DDS) 系列:- 产品变化通告:Product Discontinuance 27/Oct/2011 标准包装:2,500 系列:- 分辨率（位）:10 b 主 fclk:25MHz 调节字宽（位）:32 b 电源电压:2.97 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:16-TSSOP 包装:带卷 (TR) |
| ISL5314INZ | 功能描述:IC SYNTHESIZER DIGITAL 48-MQFP RoHS:是 类别:集成电路 (IC) >> 接口 - 直接数字合成 (DDS) 系列:- 产品变化通告:Product Discontinuance 27/Oct/2011 标准包装:2,500 系列:- 分辨率（位）:10 b 主 fclk:25MHz 调节字宽（位）:32 b 电源电压:2.97 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:16-TSSOP（0.173"，4.40mm 宽） 供应商设备封装:16-TSSOP 包装:带卷 (TR) |
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