参数资料
| 型号： | ISL54500IRUZ-T |
| 厂商： | Intersil |
| 文件页数： | 13/13页 |
| 文件大小： | 0K |
| 描述： | IC SWITCH SPDT SGL 6UTDFN |
| 产品培训模块： | Patient Monitoring and Diagnostic Equipment Solutions |
| 标准包装： | 1 |
| 功能： | 开关 |
| 电路： | 1 x SPDT |
| 导通状态电阻： | 5 欧姆 |
| 电压电源： | 单电源 |
| 电压 - 电源，单路/双路(±)： | 1.8 V ~ 5.5 V |
| 电流 - 电源： | 20nA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UFDFN |
| 供应商设备封装： | 6-UTDFN（1.2x1.0） |
| 包装： | 标准包装 |
| 其它名称： | ISL54500IRUZ-TDKR |
9
FN6549.2
November 9, 2009
very consistent over a wide V+ range, and for varying
analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output.
Off-isolation is the resistance to this feedthrough, while
crosstalk indicates the amount of feedthrough from
one switch to another. Figure 18 details the high
off-isolation provided by this family. At 1MHz,
of-isolation is about 75dB in 50Ω systems, decreasing
approximately 20dB per decade as frequency
increases. Higher load impedances decrease
off-isolation due to the voltage divider action of the
switch OFF impedance and the load impedance.
Leakage Considerations
ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal
exceeds V+ or GND.
Virtually all the analog leakage current comes from the
ESD diodes to V+ or GND. Although the ESD diodes on
a given signal pin are identical and therefore fairly well
balanced, they are reverse biased differently. Each is
biased by either V+ or GND and the analog signal. This
means their leakages will vary as the signal varies. The
difference in the two diode leakages to the V+ and
GND pins constitutes the analog-signal-path leakage
current. All analog leakage current flows between each
pin and one of the supply terminals, not to the other
switch terminal. This is why both sides of a given
switch can show leakage currents of the same or
opposite polarity. There is no connection between the
analog signal paths and V+ or GND.
Typical Performance Curves T
A = +25°C, Unless Otherwise Specified
FIGURE 10. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
FIGURE 11. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 12. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 13. ON-RESISTANCE vs SWITCH VOLTAGE
r ON
(
Ω
)
VCOM (V)
01
2345
0
1
2
3
4
5
6
7
8
ICOM = 100mA
V+ = 2.7V
V+ = 3V
V+ = 4.5V
V+ = 5V
r ON
(
Ω
)
VCOM (V)
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V+ = 4.5V
ICOM = 100mA
+25°C
+85°C
-40°C
6
r ON
(
Ω
)
VCOM (V)
2
3
4
5
6
7
8
0
0.5
1.0
1.5
2.0
2.5
V+ = 2.7V
ICOM = 100mA
+25°C
+85°C
-40°C
r ON
(
Ω)
VCOM (V)
2
3
4
5
6
7
8
9
10
11
12
13
14
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V+ = 1.8V
ICOM = 10mA
+25°C
+85°C
-40°C
ISL54500
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| ISL54501IRUZ-T | 功能描述:IC SWITCH SPST 6UTDFN RoHS:是 类别:集成电路 (IC) >> 接口 - 模拟开关，多路复用器，多路分解器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:36 系列:- 功能:多路复用器 电路:2 x 4:1 导通状态电阻:75 欧姆 电压电源:单/双电源 电压 - 电源，单路/双路(±):2 V ~ 12 V，±2 V ~ 6 V 电流 - 电源:- 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:20-SOIC（0.295"，7.50mm 宽） 供应商设备封装:20-SOIC W 包装:管件 |
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