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参数资料
| 型号： | ISL6144EVAL1Z |
| 厂商： | Intersil |
| 文件页数： | 7/30页 |
| 文件大小： | 0K |
| 描述： | EVALUATION BOARD ISL6144 ORING |
| 标准包装： | 1 |
| 主要目的： | 电源管理，O 环控制器/负荷分载 |
| 已用 IC / 零件： | ISL6144 |
| 已供物品： | 板 |
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ISL6144
The slow turn-off is achieved in two stages. The first stage
starts with a slow turn-off action and lasts for up to 20μs. The
gate pull down current for the first stage is 2mA. The second
slow turn-off stage completes the gate turn-off with a 10mA
pull down current. The 20μs delay filters out any false trip off
The fault can be detected and isolated by using the ISL6144
and an N-Channel ORing MOSFET. V IN is compared to
V COMP , and whenever:
V IN < V COMP ; where
due to noise or glitches that might be present on the supply
line.
The gate turn-on and gate turn-off drivers have a 50kHz filter
V COMP = V OUT – V TH ( HS )
V TH(HS) is defined below
(EQ. 2)
V TH ( HS ) = -------------------------- V REF ( VSET )
( R 1 + R 2 )
V OUT = V IN – I OUT ? r DS(ON )
to reduce the variation in FET forward voltage drop (and FET
gate voltage) due to normal SMPS system switching noises
(typically higher than 50kHz). These filters do not affect the
total turn-on or slow turn-off times.
Special system design precautions must be taken to insure
that no AC mains related low frequency noise will be present
at the input or output of ISL6144. Filters and multiple power
conversion stages, which are part of any distributed DC
power system, normally filter out all such noise.
HS Comparator-Fast Turn-off
There is a High Speed (HS) Comparator used for fast turn-
off of the ORing MOSFET to protect the common bus
against hard short faults at a sourcing power supply output
(refer to Figure 1).
During normal operation the gate of the ORing MOSFET is
charge pumped to a voltage that depends on whether it is in
the 20mV regulation mode or fully enhanced. In this case:
(EQ. 1)
If a dead short fault occurs in the sourcing supply, it causes
V IN to drop very quickly while V OUT is not affected as more
than one supply are paralleled. In the absence of the
ISL6144 functionality, a very high reverse current will flow
from Output to the Input supply pulling down the common
DC Bus, resulting in an overall “catastrophic” system failure.
FROM
SOURCING TO SHARED
SUPPLY LOAD
The fast turn-off mechanism will be activated and the
MOSFET(s) will be turned off very quickly. The speed of this
turn-off depends on the amount of equivalent gate loading
capacitance. For an equivalent Cgs = 39nF. The gate turn-off
time is <300ns and gate pull down current is 2A.
The level of V TH(HS) (HS Comparator trip level) is adjustable
by means of external resistors R 1 and R 2 to a value
theoretically ranging from 0V to 5.3V. Typical values are
0.05V to 0.3V. This is done in order to avoid false turn-off
due to noise or minor glitches present in the DC switching
power supply. The threshold voltage is calculated as
Equation 3:
R 1
(EQ. 3)
Where V REF(VSET) is an internal zener reference (5.3V
typical) between V OUT and VSET pins. R 1 and R 2 must be
chosen such that their sum is about 50k Ω . An external
capacitor, C 2 , is needed between V OUT and COMP pins to
provide high frequency decoupling. The HS comparator has
an internal delay time on the order of 50ns, which is part of
the <300ns overall turn-off time specification (with
Cgs = 39nF).
Gate Logic and Charge Pump
The IC has two charge pumps. The first charge pump
generates the floating gate drive for the N-Channel
MOSFET. The second charge pump output current opposes
the pull down current of the slow turn-off transistor to provide
regulation of the GATE voltage.
The presence of the charge pump allows the use of an
+
HV PASS
VIN
GATE
VIN
-
2A*
HS
DRIVER COMP
VOUT
V TH(HS)
COMP
AND
CLAMP
5.3V VSET
BIAS
R 1
R 2
C 2
N-Channel MOSFET with a floating gate drive. The
N-Channel MOSFETs normally have lower r DS(ON) (not to
mention cost saving) compared to P-Channel MOSFETs,
allowing further reduction of conduction losses.
BIAS and REF
Bias currents for the two internal zener supplies (HVREF
FIGURE 1. HS COMPARATOR
7
R 1 + R 2 = 50k Ω
and VSET) is provided by this block. This block also
provides a 0.6V band-gap reference used in the UV
detection circuit.
Undervoltage Comparator
The undervoltage comparator compares HVREF to 0.6V
internal reference. Once it falls below this level the UV
circuitry pulls and holds down the gate pin as long as the
HVREF UV condition is present. Voltage at both VIN and
HVREF pins track each other.
FN9131.7
October 6, 2011
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| ISL6144IR | 功能描述:IC CTRLR MOSFET HV ORING 20-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IR-T | 功能描述:IC CTRLR MOSFET HV ORING 20-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IRZA | 功能描述:热插拔功率分布 W/ANNEAL 20LD 5X5 QF N ORING FET CONTRLR RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| ISL6144IRZA-T | 功能描述:IC CTRLR MOSFET HV ORING 20-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
| ISL6144IV | 功能描述:IC CTRLR MOSFET ORING HV 16TSSOP RoHS:否 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:- 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR) |
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