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参数资料
| 型号： | ISL6161CB-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | 电源管理 |
| 英文描述： | Dual Power Distribution Controller |
| 中文描述： | 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14 |
| 封装： | PLASTIC, MS-012AB, SOIC-14 |
| 文件页数： | 5/10页 |
| 文件大小： | 224K |
| 代理商： | ISL6161CB-T |
5
ISL6161 Description and Operation
The ISL6161 is a multi featured +12V and +3.3V dual power
supply distribution controller, features include programmable
current regulation (CR) limiting and time to latch off.
At turn-on, the gate capacitor of each external N-Channel
MOSFET is charged with a 10
μ
A current source. These
capacitors create a programmable ramp (soft turn-on). A
charge pump supplies the gate drive for the 12V supply control
FET switch driving that gate to 17V.
The load currents pass through two external current sense
resistors. When the voltage across either resistor quickly
exceeds the user programmed Current Regulation voltage
threshold (CRVth) level, the controller enters current regulation.
The CRVth is set by the external resistor value on R
ILIM
pin. At
this time the time-out capacitor, C
TIM
, starts charging with a
10
μ
A current source and the controller enters the time out
period. The length of the time out period is set by the single
external capacitor (see Table 2) placed from the C
TIM
pin (pin
10) to ground and is characterized by a lowered gate drive
voltage to the appropriate external N-Channel MOSFET. Once
C
TIM
charges to 2V, an internal comparator is tripped resulting
in both N-Channel MOSFETs being latched off. If the voltage
across the sense resistors rises slowly in response to an OC
condition, then the CR mode is entered at ~95% of the
programmed CR level. This difference is due to the necessary
hysteresis and response time in the CR control circuitry.
Table 1 shows Rsense and Rilim recommendations and
resulting CR level for the PCI-Express add-in card connector
sizes specified.
Gate Turn-On Time
t
ON3V
C
VG
= 0.01
μ
F
C
VG
= 0.01
μ
F
C
VG
= 0.01
μ
F, ENABLE = Low
-
5
-
ms
Gate Turn-On Current
I
ON3V
8
10
12
μ
A
3X Gate Discharge Current
3XdisI
0.5
0.75
-
A
3.3V Under Voltage Threshold
3.3V
VUV
2.7
2.85
3.0
V
3.3VG High Voltage
3VG
11.2
11.9
-
V
SUPPLY CURRENT AND IO SPECIFICATIONS
V
DD
Supply Current
I
VDD
4
8
10
mA
V
DD
POR Rising Threshold
9.5
10.0
10.7
V
V
DD
POR Falling Threshold
9.3
9.8
10.3
V
Current Limit Time-Out
T
ILIM
C
TIM
= 0.1
μ
F
16
20
24
ms
ENABLE Pull-up Voltage
PWRN_V
ENABLE pin open
1.8
2.4
3.2
V
ENABLE Rising Threshold
PWR_Vth
1.1
1.5
2
V
ENABLE Hysteresis
PWR_hys
0.1
0.2
0.3
V
ENABLE Pull-Up Current
PWRN_I
60
80
100
μ
A
Current Limit Time-Out Threshold (C
TIM
)
C
TIM
_Vth
1.8
2
2.2
V
C
TIM
Charging Current
C
TIM
_I
8
10
12
μ
A
C
TIM
Discharge Current
C
TIM
_disI
1.7
2.6
3.5
mA
C
TIM
Pull-Up Current
C
TIM
_disI
V
CTIM
= 8V
3.5
5
6.5
mA
R
ILIM
Pin Current Source Output
R
ILIM
_Io
90
100
110
μ
A
Charge Pump Output Current
Qpmp_Io
C
PUMP
= 0.1
μ
F, C
PUMP
= 16V
320
560
800
μ
A
Charge Pump Output Voltage
Qpmp_Vo
No load
17.2
17.4
-
V
Charge Pump Output Voltage - Loaded
Qpmp_VIo
Load current = 100
μ
A
16.2
16.7
-
V
Charge Pump POR Rising Threshold
Qpmp+Vth
15.6
16
16.5
V
Charge Pump POR Falling Threshold
Qpmp-Vth
15.2
15.7
16.2
V
Electrical Specifications
V
DD
= 12V, C
VG
= 0.01
μ
F, C
TIM
= 0.1
μ
F, R
SENSE
= 0.1
, C
BULK
= 220
μ
F, ESR = 0.5
, T
A
= T
J
= 0
o
C to 70
o
C,
Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
TABLE 1.
PCI-EXPRESS
ADD-IN CARD
CONNECTOR
R
ILIM
(k
)
3.3V R
SENSE
(m
),
NOMINAL
CR (A)
12V R
SENSE
(m
),
NOMINAL
CR (A)
NOMINAL
CRVth
(mV)
X1
10
30, 3.3
150, 0.7
100
4.99
15, 3.5
90, 0.6
53
ISL6161
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