- 您现在的位置：买卖IC网 > PDF目录20679 > ISL6207HBZ-T (Intersil)IC MOSFET DRVR SYNC BUCK 8-SOIC PDF资料下载
参数资料
| 型号： | ISL6207HBZ-T |
| 厂商： | Intersil |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -10°C ~ 100°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
ISL6207
PWM
t PDHUGATE
t PDLUGATE
t RUGATE
t FUGATE
1V
UGATE
LGATE
1V
t PDLLGATE
t FLGATE
FIGURE 1. TIMING DIAGRAM
t PDHLGATE
t RLGATE
C BOOT ≥ ------------------------
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t PDLUGATE ] is encountered before the
upper gate begins to fall [t FUGATE ]. Again, the adaptive shoot-
through circuitry determines the lower gate delay time
t PDHLGATE . The upper MOSFET gate-to-source v oltage is
monitored, and the lower gate is allowed to rise, after the
upper MOSFET gate-to-source voltage drops belo w 1 V. The
lower gate then rises [t RLGATE ], turning on the lower
MOSFET.
This driver is optimized for converters with large step down
ratio, such as those used in a mobile-computer core voltage
regulator. The lower MOSFET is usually sized much larger.
This driver is optimized for converters with large step down
compared to the upper MOSFET because the lower
MOSFET conducts for a much longer time in a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement. The 0.4 ? on-resistance
and 4A sink current capability enable the lower gate driver to
absorb the current injected to the lower gate through the
drain-to-gate capacitor of the lower MOSFET and prevent a
shoot through caused by the high dv/dt of the phase node.
Three-State PWM Input
A unique feature of the ISL6207 and other Intersil drivers is
the addition of a shutdown window to the PWM input. If the
PWM signal enters and remains within the shutdown window
for a set holdoff time, the output drivers are disabled and
both MOSFET gates are pulled and held low. The shutdown
state is removed when the PWM signal moves outside the
shutdown window. Otherwise, the PWM rising and falling
thresholds outlined in the ELECTRICAL SPECIFICATIONS
determine when the lower and upper gates are enabled.
During start-up, PWM should be in the three-state position
(1/2 V CC ). However, with rising V CC , the active tracking
elements for PWM are not active until V CC > 1.2V, which
6
leaves PWM in a high impedance (undetermined) state;
therefore, a 500k ? resistor must be place from the PWM pin
to GND.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection
to prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during
UGATE turn-off. Once the upper MOSFET gate-to-source
voltage has dropped below a threshold of 1V, the LGATE is
allowed to rise.
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage
rating above the maximum battery voltage plus 5V. The
bootstrap capacitor can be chosen from the following
equation:
Q GATE
? V BOOT
where Q GATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The ? V BOOT term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate
charge, Q GATE , of 25nC at 5V and also assume the droop in
the drive voltage over a PWM cycle is 200mV. One will find
that a bootstrap capacitance of at least 0.125 μ F is required.
FN9075.8
December 2, 2005
相关PDF资料 |
PDF描述 |
|---|---|
| VE-2N0-EW-B1 | CONVERTER MOD DC/DC 5V 100W |
| GSC05DREI | CONN EDGECARD 10POS .100 EYELET |
| EBA18DTKH-S288 | CONN EDGECARD 36POS .125 EXTEND |
| EEM08DRMT-S288 | CONN EDGECARD 16POS .156 EXTEND |
| ISL6329CRZ | IC CTRLR PWM SYNC BUCK DL 60QFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6207HRZ | 功能描述:功率驱动器IC VER OF ISL6207CR -10 TO +100 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6207HRZ-T | 功能描述:功率驱动器IC VER OF ISL6207CR-T - 10 TO +100 RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6208 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6208_07 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Driver |
| ISL6208_11 | 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:High Voltage Synchronous Rectified Buck MOSFET Drivers |
发布紧急采购，3分钟左右您将得到回复。