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| 型号： | ISL6532BCR |
| 厂商： | Intersil |
| 文件页数： | 13/15页 |
| 文件大小： | 0K |
| 描述： | IC REG/CTRLR ACPI DUAL DDR 20QFN |
| 标准包装： | 50 |
| 应用： | 存储器，DDR/DDR2 稳压器 |
| 电流 - 电源： | 5.25mA |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-VQFN 裸露焊盘 |
| 供应商设备封装： | 20-QFN 裸露焊盘（6x6） |
| 包装： | 管件 |
ISL6532B
The important parameters for the bulk input capacitance are
the voltage rating and the RMS current rating. For reliable
operation, select bulk capacitors with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. Their voltage rating should be
at least 1.25 times greater than the maximum input voltage,
while a voltage rating of 1.5 times is a conservative
guideline. For worst cases, the RMS current rating
requirement for the input capacitor of a buck regulator is
approximately 1/2 the DC output load current.
The maximum RMS current required by the regulator may be
closely approximated through the following equation:
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss
components; conduction loss and switching loss. The
conduction losses are the largest component of power
dissipation for both the upper and the lower MOSFETs.
These losses are distributed between the two MOSFETs
according to duty factor. The switching losses seen when
sourcing current will be different from the switching losses
seen when sinking current. When sourcing current, the
upper MOSFET realizes most of the switching losses. The
lower switch realizes most of the switching losses when the
converter is sinking current (see the equations below).
---------------- × ? I OUT
1 ? V IN – V OUT V OUT ? 2 ?
L × f sw
? V IN ? ?
I RMS
MAX
=
V OUT ?
V IN ?
MAX
2
+ ------ × ? -------------------------------- × ---------------- ? ?
12
These equations assume linear voltage-current transitions
and do not adequately model power loss due the reverse-
recovery of the upper and lower MOSFET’s body diode. The
P UPPER = Io × r DS ( ON ) × D + --- ? Io × V IN × t SW × f s
For a through hole design, several electrolytic capacitors
may be needed. For surface mount designs, solid tantalum
capacitors can be used, but caution must be exercised with
regard to the capacitor surge current rating. These
capacitors must be capable of handling the surge-current at
power-up. Some capacitor series available from reputable
manufacturers are surge current tested.
MOSFET Selection - PWM Buck Converter
The ISL6532B requires 2 N-Channel power MOSFETs for
switching power and a third MOSFET to block backfeed from
V DDQ to the Input in S3 Mode. These should be selected
based upon r DS(ON) , gate supply requirements, and thermal
management requirements.
gate-charge losses are dissipated in part by the ISL6532B
and do not significantly heat the MOSFETs. However, large
gate-charge increases the switching interval, tSW which
increases the MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature at
high ambient temperature by calculating the temperature
rise according to package thermal-resistance specifications.
A separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
Approximate Losses while Sourcing current
2 1
2
P LOWER = Io 2 x r DS(ON) x (1 - D)
P LOWER = Io × r DS ( ON ) × ( 1 – D ) + --- ? Io × V IN × t SW × f s
Approximate Losses while Sinking current
P UPPER = Io 2 x r DS(ON) x D
2 1
2
Where: D is the duty cycle = V OUT / V IN ,
t SW is the combined switch ON and OFF time, and
f s is the switching frequency.
13
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6532BCR-T | 功能描述:IC REG/CTRLR ACPI DUAL DDR 20QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| ISL6532BCRZ | 功能描述:电压模式 PWM 控制器 DL DDRG W/3ALDO FOR SPRINGDALE MBS 20 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| ISL6532BCRZ-T | 功能描述:电压模式 PWM 控制器 DL DDRG W/3ALDO FOR SPRINGDALE MBS 20 RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| ISL6532CCR | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
| ISL6532CCR-T | 功能描述:IC REG/CTRLR ACPI DUAL DDR 28QFN RoHS:否 类别:集成电路 (IC) >> PMIC - 电源管理 - 专用 系列:- 应用说明:Ultrasound Imaging Systems Application Note 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:37 系列:- 应用:医疗用超声波成像，声纳 电流 - 电源:- 电源电压:2.37 V ~ 6 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:56-WFQFN 裸露焊盘 供应商设备封装:56-TQFN-EP（8x8） 包装:管件 |
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