参数资料
型号: ISL6537A-6506EVAL1Z
厂商: Intersil
文件页数: 15/16页
文件大小: 0K
描述: EVALUATION BOARD ISL986A-6506
标准包装: 1
主要目的: 特殊用途 DC/DC,DDR 存储器电源
输出及类型: 7,非隔离
功率 - 输出: 178W
输出电压: 1.8V,3.3V,5V,1.5V,1.2V,2.5V,0.9V
电流 - 输出: 15A,14A,14A,10A,5A,5A,2A
输入电压: 3.3V,5V,12V
稳压器拓扑结构: 降压
板类型: 完全填充
已供物品:
已用 IC / 零件: ISL6506,ISL6537A
ISL6537A
P UPPER = Io × r DS ( ON ) × D + --- ? Io × V IN × t SW × f s
For a through hole design, several electrolytic capacitors
may be needed. For surface mount designs, solid tantalum
capacitors can be used, but caution must be exercised with
regard to the capacitor surge current rating. These
capacitors must be capable of handling the surge-current at
power-up. Some capacitor series available from reputable
manufacturers are surge current tested.
MOSFET Selection - PWM Buck Converter
The ISL6537A requires 2 N-Channel power MOSFETs for
switching power and a third MOSFET to block backfeed from
V DDQ to the Input in S3 Mode. These should be selected
increases the MOSFET switching losses. Ensure that both
MOSFETs are within their maximum junction temperature at
high ambient temperature by calculating the temperature
rise according to package thermal-resistance specifications.
A separate heatsink may be necessary depending upon
MOSFET power, package type, ambient temperature and air
flow.
Approximate Losses while Sourcing current
2 1
2
P LOWER = Io 2 x r DS(ON) x (1 - D)
based upon r DS(ON) , gate supply requirements, and thermal
management requirements.
Approximate Losses while Sinking current
P UPPER = Io 2 x r DS(ON) x D
(EQ. 10)
P LOWER = Io × r DS ( ON ) × ( 1 – D ) + --- ? Io × V IN × t SW × f s
In high-current applications, the MOSFET power dissipation,
package selection and heatsink are the dominant design
factors. The power dissipation includes two loss
components; conduction loss and switching loss. The
conduction losses are the largest component of power
dissipation for both the upper and the lower MOSFETs.
These losses are distributed between the two MOSFETs
according to duty factor. The switching losses seen when
sourcing current will be different from the switching losses
seen when sinking current. When sourcing current, the
upper MOSFET realizes most of the switching losses. The
lower switch realizes most of the switching losses when the
converter is sinking current (see the equations below).
These equations assume linear voltage-current transitions
2 1
2
Where: D is the duty cycle = V OUT /V IN ,
t SW is the combined switch ON and OFF time, and
f s is the switching frequency.
MOSFET Selection - LDO
The main criteria for selection of the linear regulator pass
transistor is package selection for efficient removal of heat.
Select a package and heatsink that maintains the junction
temperature below the rating with a maximum expected
ambient temperature.
The power dissipated in the linear regulator is:
and do not adequately model power loss due the reverse-
recovery of the upper and lower MOSFET’s body diode. The
P LINEAR ? I O × ( V IN – V OUT )
(EQ. 11)
gate-charge losses are dissipated in part by the ISL6537A
and do not significantly heat the MOSFETs. However, large
gate-charge increases the switching interval, t SW which
15
where I O is the maximum output current and V OUT is the
nominal output voltage of the linear regulator.
FN9143.5
相关PDF资料
PDF描述
195D155X9010C2T CAP TANT 1.5UF 10V 10% 0905
195D155X0010C2T CAP TANT 1.5UF 10V 20% 0905
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ISL6548A-6506EVAL1Z EVALUATION BOARD ISL6548A-6506
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