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参数资料
| 型号： | ISL6596IRZ |
| 厂商： | Intersil |
| 文件页数： | 6/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 10-DFN |
| 标准包装： | 100 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 19ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFDFN 裸露焊盘 |
| 供应商设备封装： | 10-DFN-EP（3x3） |
| 包装： | 管件 |
ISL6596
Functional Pin Description
Note: Pin numbers refer to the SOIC package. Check
diagram for corresponding DFN pinout.
UGATE (Pin 1)
Upper gate drive output. Connect to gate of high-side
N-Channel power MOSFET. A gate resistor is never
recommended on this pin, as it interferes with the operation
shoot-through protection circuitry.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect a bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge
used to turn on the upper MOSFET. See “Bootstrap
Considerations” on page 7 for guidance in choosing the
appropriate capacitor value.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see
“PWM Input and Threshold Control” on page 7 for further
details. Connect this pin to the PWM output of the controller.
GND (Pin 4)
Ground pin. All signals are referenced to this node.
LGATE (Pin 5)
Lower gate drive output. Connect to gate of the low side
N-Channel power MOSFET. A gate resistor is never
recommended on this pin, as it interferes with the operation
shoot-through protection circuitry.
VCC (Pin 6)
Connect this pin to a +5V bias supply. Locally bypass with a
high quality ceramic capacitor to ground.
VCTRL (Pin 7)
This pin sets the PWM logic threshold. Connect this pin to
3.3V source for 3.3V PWM input and pull it to 5V source for
5V PWM input.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET. This
pin provides the return path for the upper gate driver current.
Thermal Pad (in DFN only)
The metal pad underneath the center of the IC is a thermal
substrate. The PCB “thermal land” design for this exposed
die pad should include vias that drop down and connect to
one or more buried copper plane(s). This combination of
vias for vertical heat escape and buried planes for heat
spreading allows the DFN to achieve its full thermal
potential. This pad should be either grounded or floating,
and it should not be connected to other nodes. Refer to
TB389 for design guidelines.
Timing Diagram
50% of VCC
PWM
t PDHU
t PDLU
t TSSHD
UGATE
LGATE
1V
t RU
1V
t RL
t PTS
t TSSHD
t RU
t FU
t PTS
t PDLL
t PDHL
t FL
FIGURE 1. TIMING DIAGRAM
6
FN9240.1
January 22, 2010
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| ISL6596IRZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6597CRZ | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6597CRZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6598DRZ-T | 制造商:Intersil Corporation 功能描述:PB-FREE 48LD 7X7 QFN, T&R, GRAPHICS PROCESSOR DIGITAL CONT. - Tape and Reel 制造商:Intersil Corporation 功能描述:IC GRAPHICS PROCESSOR DGTL 制造商:Intersil 功能描述:4 8LD 7X7 GRAPHICS PROCESSOR DIGTL CONT |
| ISL6605CB | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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