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| 型号： | ISL6608CB-T |
| 厂商： | Intersil |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 20ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
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ISL6608
Data Sheet
March 2004
FN9140.1
Synchronous Rectified MOSFET Driver
with Pre-Biased Load Startup Capability
The ISL6608 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes gate drive losses due to MOSFET gate charge at
high switching frequency applications. Each driver is capable
of driving a 3000pF load with a low propagation delay and
less than 10ns transition time. This product implements
bootstrapping on the upper gate with an internal bootstrap
Schottky diode, reducing implementation cost, complexity,
and allowing the use of higher performance, cost effective
N-Channel MOSFETs. Adaptive shoot-through protection is
integrated to prevent both MOSFETs from conducting
simultaneously.
The ISL6608 features 4A sink current for the lower gate
driver, which is capable of holding the lower MOSFET gate
during the Phase node rising edge to prevent shoot-through
power loss caused by the high dv/dt of the Phase node.
The ISL6608 also features a Three-State PWM input which,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is shut down. This feature eliminates the Schottky
diode that is usually seen in a microprocessor power system
for protecting the microprocessor from reversed output
voltage events.
A diode emulation feature is integrated in the ISL6608 to
enhance converter efficiency at light load conditions. Diode
emulation also prevents a negative transient when starting
up with a pre-biased voltage on the output. When diode
emulation is enabled, the driver allows discontinuous
conduction mode by detecting when the inductor current
reaches zero and subsequently turns off the low side
MOSFET, which prevents the output from sinking current
and producing a negative transient on a pre-biased output
(see Figures 6 and 7 on page 7).
Features
? Dual MOSFET Drives for Synchronous Rectified Bridge
? Adaptive Shoot-Through Protection
? 0.5 ? On-Resistance and 4A Sink Current Capability
? Supports High Switching Frequency up to 2MHz
- Fast Output Rise/Fall Time and Low Propagation Delay
? Three-State PWM Input for Power Stage Shutdown
? Internal Bootstrap Schottky Diode
? Low Bias Supply Current (5V, 80μA)
? Diode Emulation for Enhanced Light Load Efficiency and
Pre-Biased Startup Applications
? VCC POR (Power-On-Reset) Feature Integrated
? Low Three-State Shutdown Holdoff Time (Typically 160ns)
? Pin-to-Pin Compatible with ISL6605
? QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
? Pb-free Available as an Option
Applications
? Core Voltage Supplies for FPGAs and PowerPC
Microprocessors
? Point-Of-Load Modules with Pre-Biased Start-Up
Requirements
? High Frequency and High Current DC-DC Converters
Related Literature
? Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright ? Intersil Americas Inc. 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6608CBZ | 功能描述:功率驱动器IC VER OF ISL6608CB RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6608CBZ-T | 功能描述:功率驱动器IC VER OF ISL6608CB-T RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ISL6608CR | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6608CR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-QFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6608CRZ | 功能描述:功率驱动器IC VER OF ISL6608CR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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