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参数资料
| 型号： | ISL6610IRZ |
| 厂商： | Intersil |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR DUAL SYNC 16-QFN |
| 标准包装： | 75 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 18ns |
| 配置数： | 2 |
| 输出数： | 4 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN-EP（4x4） |
| 包装： | 管件 |
ISL6610, ISL6610A
Absolute Maximum Ratings
Thermal Information
Supply Voltage (PVCC, VCC) . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Thermal Resistance (Typical)
θ JA (°C/W)
θ JC (°C/W)
Input Voltage (V EN , V PWM ) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (V BOOT-GND ). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT To PHASE Voltage (V BOOT-PHASE ) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10 μ J) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V PHASE - 0.3V (DC) to V BOOT
V PHASE - 5V (<20ns Pulse Width, 10 μ J) to V BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5 μ J) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . .-40°C to +125°C
HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2kV
SOIC Package (Note 1) . . . . . . . . . . . . 90 N/A
QFN Package (Notes 2 and 3). . . . . . . 46 8.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ± 10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
+150°C max junction temperature is intended for short periods of time to prevent shortening the lifetime. Constantly operated at 150°C may shorten the life of the part.
NOTES:
1. θ JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
3. θ JC , “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
Electrical Specifications
These specifications apply for T A = -40°C to +85°C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY CURRENT
Bias Supply Current
I VCC+PVCC
PWM pin floating, V VCC = V PVCC = 5V
F PWM = 300kHz, V VCC = V PVCC = 5V
-
-
240
1.6
-
-
μ A
mA
BOOTSTRAP DIODE
Forward Voltage
V F
Forward bias current = 2mA
0.30
0.60
0.70
V
T A = 0°C to +70°C
Forward bias current = 2mA
0.30
0.60
0.75
V
T A = -40°C to +85°C
POWER-ON RESET
POR Rising
POR Falling
Hysteresis
-
2.6
-
3.4
3.0
400
4.2
-
-
V
V
mV
PWM INPUT
Sinking Impedance
Source Impedance
Tri-State Rising Threshold
Tri-State Falling Threshold
Tri-State Shutdown Holdoff Time
R PWM_SNK
R PWM_SRC
t TSSHD
V VCC = V PVCC = 5V (250mV Hysteresis)
V VCC = V PVCC = 5V(300mV Hysteresis)
-
-
1.00
3.10
-
4.6
4.9
1.20
3.41
80
-
-
1.40
3.70
-
k Ω
k Ω
V
V
ns
SWITCHING TIME (Note 4, See Figure 1)
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-Off Propagation Delay
LGATE Turn-Off Propagation Delay
t RU
t RL
t FU
t FL
t PDLU
t PDLL
3nF Load
3nF Load
3nF Load
3nF Load
Outputs Unloaded
Outputs Unloaded
-
-
-
-
-
-
8.0
8.0
8.0
4.0
18
25
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
4
FN6395.0
November 22, 2006
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| ISL6610IRZ-T | 功能描述:IC MOSFET DRVR DUAL SYNC 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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| ISL6611ACRZ-T | 功能描述:IC REG CTRLR DOUBLER PWM 16-QFN RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:275kHz 占空比:50% 电源电压:18 V ~ 110 V 降压:无 升压:无 回扫:无 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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