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参数资料
| 型号： | ISL6612AEIBZ-T |
| 厂商： | Intersil |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC BUCK 8EPSOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 1.25A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 带卷 (TR) |
ISL6612A, ISL6613A
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
MIN
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
(Note 8)
TYP
(Note 8) UNITS
Three-State Upper Gate Falling Threshold
Shutdown Holdoff Time
t TSSHD
VCC = 12V
-
-
2.60
245
-
-
V
ns
UGATE Rise Time
LGATE Rise Time
UGATE Fall Time
LGATE Fall Time
UGATE Turn-On Propagation Delay (Note 7)
LGATE Turn-On Propagation Delay (Note 7)
UGATE Turn-Off Propagation Delay (Note 7)
LGATE Turn-Off Propagation Delay (Note 7)
LG/UG Three-State Propagation Delay (Note 7)
t RU
t RL
t FU
t FL
t PDHU
t PDHL
t PDLU
t PDLL
t PDTS
V PVCC = 12V, 3nF Load, 10% to 90%
V PVCC = 12V, 3nF Load, 10% to 90%
V PVCC = 12V, 3nF Load, 90% to 10%
V PVCC = 12V, 3nF Load, 90% to 10%
V PVCC = 12V, 3nF Load, Adaptive
V PVCC = 12V, 3nF Load, Adaptive
V PVCC = 12V, 3nF Load
V PVCC = 12V, 3nF Load
V PVCC = 12V, 3nF Load
-
-
-
-
-
-
-
-
-
26
18
18
12
10
10
10
10
10
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
OUTPUT (Note 7)
Upper Drive Source Current
Upper Drive Source Impedance
I U_SOURCE V PVCC = 12V, 3nF Load
R U_SOURCE 150mA Source Current
-
1.25
1.25
2.0
-
3.0
A
Ω
Upper Drive Sink Current
I U_SINK
V PVCC = 12V, 3nF Load
-
2
-
A
Upper Drive Transition Sink Impedance
Upper Drive DC Sink Impedance
R U_SINK_TR 70ns With Respect To PWM Falling
R U_SINK_DC 150mA Source Current
-
0.9
1.3
1.65
2.2
3.0
Ω
Ω
Lower Drive Source Current
I L_SOURCE
V PVCC = 12V, 3nF Load
-
2
-
A
Lower Drive Source Impedance
R L_SOURCE 150mA Source Current
0.85
1.25
2.2
Ω
Lower Drive Sink Current
Lower Drive Sink Impedance
I L_SINK
R L_SINK
V PVCC = 12V, 3nF Load
150mA Sink Current
-
0.60
3
0.80
-
1.35
A
Ω
NOTES:
7. Limits should be considered typical and are not production tested.
8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Functional Pin Description
PACKAGE PIN #
PIN
SOIC
1
2
DFN
1
2
SYMBOL
UGATE
BOOT
FUNCTION
Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See “Internal Bootstrap
Device” on page 8 for guidance in choosing the capacitor value.
-
3
3, 8
4
N/C
PWM
No Connection.
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, See
“Three-State PWM Input” on page 7 for further details. Connect this pin to the PWM output of the controller.
4
5
6
7
5
6
7
9
GND
LGATE
VCC
PVCC
Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
Connect this pin to a +12V bias supply. Place a high quality low ESR ceramic capacitor from this pin to GND.
This pin supplies power to both upper and lower gate drives in ISL6613A; only the lower gate drive in ISL6612A. Its
operating range is +5V to 12V. Place a high quality low ESR ceramic capacitor from this pin to GND.
8
10
PHASE Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides a
return path for the upper gate drive.
9
11
PAD
Connect this pad to the power ground plane (GND) via thermally enhanced connection.
6
FN9159.7
May 1, 2012
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相关代理商/技术参数 |
参数描述 |
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| ISL6612AIB | 制造商:Intersil Corporation 功能描述: |
| ISL6612AIBZ | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6612AIBZ-T | 功能描述:IC MOSFET DRVR SYNC BUCK 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL6612AIR | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| ISL6612AIR-T | 功能描述:IC MOSFET DRVR SYNC BUCK 10-DFN RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
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