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| 型号： | ISL6612BCBZ |
| 厂商： | Intersil |
| 文件页数： | 9/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET SYNC BUCK 8SOIC |
| 标准包装： | 98 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 1.25A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 7 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1241 (CN2011-ZH PDF) |
ISL6612B, ISL6613B
desired frequency for the selected MOSFETs. The total gate
drive power losses due to the gate charge of MOSFETs and
the driver ’s internal circuitry and their corresponding average
driver current can be estimated with Equations 2 and 3,
UVCC
BOOT
C GD
D
respectively,
R HI1
G
C DS
P Qg_TOT = P Qg_Q1 + P Qg_Q2 + I Q ? VCC
(EQ. 2)
R LO1
R G1
R GI1
P Qg_Q1 = --------------------------------------- ? F SW ? N Q1
Q G1 ? UVCC 2
V GS1
PHASE
C GS
S
Q1
P Qg_Q2 = -------------------------------------- ? F SW ? N Q2
Q G2 ? LVCC 2
V GS2
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
I DR = ? ------------------------------------------------------ + ----------------------------------------------------- ? ? F SW + I Q
? Q G1 ? UVCC ? N Q1 Q G2 ? LVCC ? N Q2 ?
? V GS1 V GS2 ?
(EQ. 3)
LVCC
C GD
D
where the gate charge (Q G1 and Q G2 ) is defined at a
R HI2
G
C DS
particular gate to source voltage (V GS1 and V GS2 ) in the
corresponding MOSFET datasheet; I Q is the driver ’s total
quiescent current with no load at both drive outputs; N Q1
and N Q2 are the number of upper and lower MOSFETs,
R LO2
R G2
R GI2
C GS
S
Q2
respectively; UVCC and LVCC are the drive voltages for
both upper and lower FETs, respectively. The I Q* VCC
product is the quiescent power of the driver without
capacitive load and is typically 116mW at 300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R G1 and R G2 ) and the internal gate resistors
(R GI1 and R GI2 ) of MOSFETs. Figures 3 and 4 show the
typical upper and lower gate drives turn-on transition path.
The power dissipation on the driver can be roughly
estimated as:
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Layout Considerations
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
P DR_UP = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI1 + R EXT1 R LO1 + R EXT1 ?
P DR_LOW = ? -------------------------------------- + ---------------------------------------- ? ? ---------------------
? R HI2 + R EXT2 R LO2 + R EXT2 ?
P DR = P DR_UP + P DR_LOW + I Q ? VCC
? R HI1 R LO1 ? P Qg_Q1
? R HI2 R LO2 ? P Qg_Q2
2
2
(EQ. 4)
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between the power components is required for good
airflow. The traces from the drivers to the FETs should be
kept short and wide to reduce the inductance of the traces
R EXT1 = R G1 + -------------
N
R EXT2 = R G2 + -------------
N
R GI1
Q1
9
R GI2
Q2
and to promote clean drive signals.
FN9205.4
May 1, 2012
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