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参数资料
| 型号： | ISL6615AIBZ |
| 厂商： | Intersil |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC HF 6A 8-SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 6.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
High-Frequency 6A Sink Synchronous MOSFET Drivers
with Protection Features
ISL6615A
The ISL6615A is a high-speed MOSFET driver optimized to drive
upper and lower power N-Channel MOSFETs in a synchronous
rectified buck converter topology. This driver, combined with an
Intersil Digital or Analog multiphase PWM controller, forms a
complete high frequency and high efficiency voltage regulator.
The ISL6615A drives both upper and lower gates over a range of
4.5V to 13.2V. This drive-voltage provides the flexibility necessary
to optimize applications involving trade-offs between gate charge
and conduction losses.
The ISL6615A features 6A typical sink current for the low-side
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power loss
caused by the self turn-on of the lower MOSFET due to the high
dV/dt of the switching node.
An advanced adaptive zero shoot-through protection is integrated
to prevent both the upper and lower MOSFETs from conducting
simultaneously and to minimize the dead-time. The ISL6615A
includes an overvoltage protection feature operational before
VCC exceeds its turn-on threshold, at which the PHASE node is
connected to the gate of the low side MOSFET (LGATE). The
output voltage of the converter is then limited by the threshold of
the low side MOSFET, which provides some protection to the load
if the upper MOSFET(s) is shorted.
The ISL6615A also features an input that recognizes a
high-impedance state, working together with Intersil multiphase
PWM controllers to prevent negative transients on the controlled
output voltage when operation is suspended. This feature
eliminates the need for the Schottky diode that may be utilized in
a power system to protect the load from negative output voltage
damage.
Features
? Dual MOSFET Drives for Synchronous Rectified Bridge
? Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- LGATE Detection
- Auto-zero of r DS(ON) Conduction Offset Effect
? Adjustable Gate Voltage for Optimal Efficiency
? 36V Internal Bootstrap Schottky Diode
? Bootstrap Capacitor Overcharging Prevention
? Supports High Switching Frequency (up to 1MHz)
- 6A LGATE Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
? Support 5V PWM Input Logic
? Tri-State PWM Input for Safe Output Stage Shutdown
? Tri-State PWM Input Hysteresis for Applications with Power
Sequencing Requirement
? Pre-POR Overvoltage Protection
? VCC Undervoltage Protection
? Expandable Bottom Copper PAD for Better Heat Spreading
? Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB Efficiency
and Thinner in Profile
? Pb-free (RoHS compliant)
Applications
? Optimized for POL DC/DC Converters for IBA Systems
? Core Regulators for Intel? and AMD? Microprocessors
? High Current Low-Profile DC/DC Converters
? High Frequency and High Efficiency VRM and VRD
? Synchronous Rectification for Isolated Power Supplies
Related Literature
? Technical Brief TB363 “Guidelines for Handling and Processing
Moisture Sensitive Surface Mount Devices (SMDs)”
? Technical Brief TB389 “PCB Land Pattern Design and Surface
Mount Guidelines for QFN Packages”
April 13, 2012
FN6608.2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2008, 2010, 2012. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
相关PDF资料 |
PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL6615AIBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615AIRZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615AIRZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615CBZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615CBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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