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参数资料
| 型号： | ISL6615AIBZ |
| 厂商： | Intersil |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR SYNC HF 6A 8-SOIC |
| 标准包装： | 980 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 10ns |
| 电流 - 峰： | 2.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 6.8 V ~ 13.2 V |
| 工作温度： | -40°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
ISL6615A
Ordering Information
PART NUMBER
(Notes 1, 2, 3)
ISL6615ACBZ
ISL6615ACRZ
ISL6615AIBZ
ISL6615AIRZ
ISL6615AFRZ
PART
MARKING
6615A CBZ
615A
6615A IBZ
15AI
15AF
TEMP.
RANGE (°C)
0 to +70
0 to +70
-40 to +85
-40 to +85
-40 to +125
PACKAGE
(Pb-free)
8 Ld SOIC
10 Ld 3x3 DFN
8 Ld SOIC
10 Ld 3x3 DFN
10 Ld 3x3 DFN
PKG.
DWG. #
M8.15
L10.3x3
M8.15
L10.3x3
L10.3x3
NOTES:
1. Add “-T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-
free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for ISL6615A . For more information on MSL please see techbrief TB363 .
Pin Configurations
ISL6615A
(8 LD SOIC)
TOP VIEW
ISL6615A
(10 LD 3x3 DFN)
TOP VIEW
UGATE
BOOT
1
2
8
7
PHASE
PVCC
UGATE
BOOT
1
2
10 PHASE
9 PVCC
PWM
GND
3
4
6
5
VCC
LGATE
N/C
PWM
3
4
GND
8 N/C
7 VCC
GND
5
6 LGATE
*RECOMMEND TO CONNECT PIN 3 TO GND AND PIN 8 TO PVCC
Functional Pin Descriptions
PACKAGE PIN #
PIN
SOIC
1
2
DFN
1
2
SYMBOL
UGATE
BOOT
FUNCTION
Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the Internal Bootstrap
Device “TIMING DIAGRAM” on page 6 under Description for guidance in choosing the capacitor value.
-
3
3, 8
4
N/C
PWM
No Connection. Recommend to connect pin 3 to GND and pin 8 to PVCC.
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see the
“TIMING DIAGRAM” on page 6 section under Description for further details. Connect this pin to the PWM output of the
controller.
4
5
6
7
5
6
7
9
GND
LGATE
VCC
PVCC
Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
Its operating range is +6.8V to 13.2V. Place a high quality low ESR ceramic capacitor from this pin to GND.
This pin supplies power to both upper and lower gate drives. Its operating range is +4.5V to 13.2V. Place a high quality
low ESR ceramic capacitor from this pin to GND.
8
10
PHASE
Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides a return
path for the upper gate drive.
9
11
PAD
Connect this pad to the power ground plane (GND) via thermally enhanced connection.
3
FN6608.2
April 13, 2012
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相关代理商/技术参数 |
参数描述 |
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| ISL6615AIBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615AIRZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615AIRZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 10-DFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615CBZ | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| ISL6615CBZ-T | 功能描述:IC MOSFET DRVR SYNC HF 6A 8-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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