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参数资料
| 型号： | ISL6612BIRZ-T |
| 厂商： | INTERSIL CORP |
| 元件分类： | MOSFETs |
| 英文描述： | Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP |
| 中文描述： | 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10 |
| 封装： | 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10 |
| 文件页数： | 12/12页 |
| 文件大小： | 298K |
| 代理商： | ISL6612BIRZ-T |
9
FN9205.3
July 27, 2006
the selected MOSFETs. The total gate drive power losses
due to the gate charge of MOSFETs and the driver’s internal
circuitry and their corresponding average driver current can
where the gate charge (QG1 and QG2) is defined at a
particular gate to source voltage (VGS1and VGS2) in the
corresponding MOSFET datasheet; IQ is the driver’s total
quiescent current with no load at both drive outputs; NQ1
and NQ2 are the number of upper and lower MOSFETs,
respectively; UVCC and LVCC are the drive voltages for
both upper and lower FETs, respectively. The IQ*VCC
product is the quiescent power of the driver without
capacitive load and is typically 116mW at 300kHz.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (RG1 and RG2) and the internal gate resistors
typical upper and lower gate drives turn-on transition path.
The power dissipation on the driver can be roughly
estimated as:
Layout Considerations
For heat spreading, place copper underneath the IC whether
it has an exposed pad or not. The copper area can be
extended beyond the bottom area of the IC and/or
connected to buried copper plane(s) with thermal vias. This
combination of vias for vertical heat escape, extended
copper plane, and buried planes for heat spreading allows
the IC to achieve its full thermal potential.
Place each channel power component as close to each
other as possible to reduce PCB copper losses and PCB
parasitics: shortest distance between DRAINs of upper FETs
and SOURCEs of lower FETs; shortest distance between
DRAINs of lower FETs and the power ground. Thus, smaller
amplitudes of positive and negative ringing are on the
switching edges of the PHASE node. However, some space
in between the power components is required for good
airflow. The traces from the drivers to the FETs should be
kept short and wide to reduce the inductance of the traces
and to promote clean drive signals.
P
Qg_TOT
P
Qg_Q1
P
Qg_Q2
I
Q
VCC
++
=
(EQ. 2)
P
Qg_Q1
Q
G1
UVCC2
V
GS1
---------------------------------------
F
SW
N
Q1
=
P
Qg_Q2
Q
G2
LVCC2
V
GS2
--------------------------------------
F
SW
N
Q2
=
I
DR
Q
G1
UVCC
N
Q1
V
GS1
------------------------------------------------------
Q
G2
LVCC
N
Q2
V
GS2
-----------------------------------------------------
+
F
SW
I
Q
+
=
(EQ. 3)
P
DR
P
DR_UP
P
DR_LOW
I
Q
VCC
++
=
(EQ. 4)
P
DR_UP
R
HI1
R
HI1
R
EXT1
+
--------------------------------------
R
LO1
R
LO1
R
EXT1
+
----------------------------------------
+
P
Qg_Q1
2
---------------------
=
P
DR_LOW
R
HI2
R
HI2
R
EXT2
+
--------------------------------------
R
LO2
R
LO2
R
EXT2
+
----------------------------------------
+
P
Qg_Q2
2
---------------------
=
R
EXT1
R
G1
R
GI1
N
Q1
-------------
+
=
R
EXT2
R
G2
R
GI2
N
Q2
-------------
+
=
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
Q1
D
S
G
RGI1
RG1
BOOT
RHI1
CDS
CGS
CGD
RLO1
PHASE
UVCC
LVCC
Q2
D
S
G
RGI2
RG2
RHI2
CDS
CGS
CGD
RLO2
ISL6612B, ISL6613B
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