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参数资料
型号： ISL6612BIRZ-T
厂商： INTERSIL CORP
元件分类： MOSFETs
英文描述： Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
中文描述： 3 A HALF BRDG BASED MOSFET DRIVER, PDSO10
封装： 3 X 3 MM, ROHS COMPLIANT, PLASTIC, DFN-10
文件页数： 9/12页
文件大小： 298K
代理商： ISL6612BIRZ-T
6
FN9205.3
July 27, 2006
Three-State Upper Gate Rising Threshold
VCC = 12V
3.20
V
Three-State Upper Gate Falling Threshold
VCC = 12V
2.60
V
Shutdown Holdoff Time
tTSSHD
-
245
-
ns
UGATE Rise Time
tRU
VPVCC = 12V, 3nF Load, 10% to 90%
-
26
-
ns
LGATE Rise Time
tRL
VPVCC = 12V, 3nF Load, 10% to 90%
-
18
-
ns
UGATE Fall Time
tFU
VPVCC = 12V, 3nF Load, 90% to 10%
-
18
-
ns
LGATE Fall Time
tFL
VPVCC = 12V, 3nF Load, 90% to 10%
-
12
-
ns
UGATE Turn-On Propagation Delay (Note 4)
tPDHU
VPVCC = 12V, 3nF Load, Adaptive
-
10
-
ns
LGATE Turn-On Propagation Delay (Note 4)
tPDHL
VPVCC = 12V, 3nF Load, Adaptive
-
10
-
ns
UGATE Turn-Off Propagation Delay (Note 4)
tPDLU
VPVCC = 12V, 3nF Load
-
10
-
ns
LGATE Turn-Off Propagation Delay (Note 4)
tPDLL
VPVCC = 12V, 3nF Load
-
10
-
ns
LG/UG Three-State Propagation Delay (Note 4)
tPDTS
VPVCC = 12V, 3nF Load
-
10
-
ns
OUTPUT (Note 4)
Upper Drive Source Current
IU_SOURCE VPVCC = 12V, 3nF Load
-
1.25
-
Α
Upper Drive Source Impedance
RU_SOURCE 150mA Source Current
1.25
2.0
3.0
Upper Drive Sink Current
IU_SINK
VPVCC = 12V, 3nF Load
-
2
-
Α
Upper Drive DC Sink Impedance
RU_SINK
150mA Source Current
.9
1.6
3.0
Lower Drive Source Current
IL_SOURCE VPVCC = 12V, 3nF Load
-
2
-
A
Lower Drive Source Impedance
RL_SOURCE 150mA Source Current
0.85
1.35
2.2
Lower Drive Sink Current
IL_SINK
VPVCC = 12V, 3nF Load
-
3
-
A
Lower Drive Sink Impedance
RL_SINK
150mA Sink Current
0.60
0.80
1.35
NOTE:
4. Guaranteed by design. Not 100% tested in production.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Functional Pin Description
PACKAGE PIN #
PIN
SYMBOL
FUNCTION
SOIC
DFN
1
UGATE
Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET.
2
BOOT
Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the Internal Bootstrap
Device section under DESCRIPTION for guidance in choosing the capacitor value.
-
3, 8
N/C
No Connection.
3
4
PWM
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see
the three-state PWM Input section under DESCRIPTION for further details. Connect this pin to the PWM output of the
controller.
4
5
GND
Bias and reference ground. All signals are referenced to this node. It is also the power ground return of the driver.
5
6
LGATE
Lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
6
7
VCC
Connect this pin to a +12V bias supply. Place a high quality low ESR ceramic capacitor from this pin to GND.
7
9
PVCC
This pin supplies power to both upper and lower gate drives in ISL6613B; only the lower gate drive in ISL6612B.
Its operating range is +5V to 12V. Place a high quality low ESR ceramic capacitor from this pin to GND.
8
10
PHASE
Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides
a return path for the upper gate drive.
9
11
PAD
Connect this pad to the power ground plane (GND) via thermally enhanced connection.
ISL6612B, ISL6613B
相关PDF资料
PDF描述
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