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参数资料
| 型号： | ISL85033DUALEVAL1Z |
| 厂商： | Intersil |
| 文件页数： | 9/26页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD 1 FOR ISL85033 |
| 标准包装： | 1 |
| 系列： | * |
ISL85033
Electrical Specifications T A = -40°C to +85°C, V IN = 4.5V to 28V, unless otherwise noted. Typical values are at T A = +25°C.
Boldface limits apply over the operating temperature range, -40°C to +85°C (Continued)
MIN
MAX
PARAMETER
SYMBOL
TEST CONDITIONS
(Note 8)
TYP
(Note 8)
UNITS
POWER-GOOD
PG1, PG2 Trip Level PG to PGOOD1,
Rise
91
94
%
PGOOD2
PG1, PG2 Propagation Delay
Fall
Percentage of the soft-start time
82.5
85.5
10
%
%
PG1, PG2 Low Voltage
ISINK = 3mA
100
300
mV
ENABLE INPUT
EN1, EN2 Leakage Current
EN1, EN2 Input Threshold Voltage
EN1/2 = 0V/5V
Low Level
Float Level
High Level
-1
1.0
2
1
0.8
1.4
μA
V
V
V
SYNC INPUT/OUTPUT
SYNCIN Input Threshold
Falling Edge
Rising Edge
Hysteresis
1.1
1.4
1.6
200
1.9
V
V
mV
SYNCIN Leakage Current
SYNCIN Pulse Width
SYNCOUT Phase-shift to SYNCIN
SYNCIN = 0V/5V
Measured from rising edge to rising
100
10
180
1000
nA
ns
°
edge, if duty cycle is 50%
SYNCOUT Frequency Range
600
4000
kHz
SYNCOUT Output Voltage High
SYNCOUT Output Voltage Low
ISYNCOUT = 3mA
V CC - 0.3
V CC -0.08
0.08
0.3
V
V
FAULT PROTECTION
Thermal Shutdown Temperature
T SD
T HYS
Rising Threshold
Hysteresis
150
20
°C
°C
Overcurrent Protection Threshold
(Note 7)
4.1
5.1
6.1
A
OCP Blanking Time
POWER MOSFET
60
ns
Highside
Internal BOOT1, BOOT2 Refresh Lowside
PHASE Leakage Current
PHASE Rise Time
R HDS
R LDS
t RISE
I PHASE = 100mA
I PHASE = 100mA
EN1/2 = PHASE1/2 = 0V
V IN = 25V
75
1
10
150
300
m Ω
Ω
nA
ns
NOTES:
6. Test Condition: V IN = 28V, FB forced above regulation point (0.8V), no switching, and power MOSFET gate charging current not included.
7. Established by both current sense amplifier gain test and current sense amplifier output test @ I L = 0A.
8. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
9
FN6676.6
February 23, 2012
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