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参数资料
| 型号： | ISL89162FBEBZ |
| 厂商： | Intersil |
| 文件页数： | 4/14页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 2CH 6A 8SOIC |
| 标准包装： | 980 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 25ns |
| 电流 - 峰： | 6A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 管件 |
ISL89160, ISL89161, ISL89162
Absolute Maximum Ratings
Supply Voltage, V DD Relative to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to 18V
Logic Inputs (INA, INB) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to V DD + 0.3V
Outputs (OUTA, OUTB) . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to V DD + 0.3V
Average Output Current (Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
ESD Ratings
Human Body Model Class 2 (Tested per JESD22-A114E) . . . . . . . 2000V
Machine Model Class B (Tested per JESD22-A115-A) . . . . . . . . . . . 200V
Charged Device Model Class IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Latch-Up (Tested per JESD-78B; Class 2, Level A) Output Current. . . 500mA
Thermal Information
Thermal Resistance (Typical) θ JA (°C/W) θ JC (°C/W)
8 Ld TDFN Package (Notes 4, 5). . . . . . . . . 44 3
8 Ld EPSOIC Package (Notes 4, 5) . . . . . . . 42 3
Max Power Dissipation at +25°C in Free Air . . . . . . . . . . . . . . . . . . . . . 2.27W
Max Power Dissipation at +25°C with Copper Plane . . . . . . . . . . . . . 33.3W
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Operating Junction Temp Range . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Maximum Recommended Operating
Conditions
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Supply Voltage, V DD Relative to GND. . . . . . . . . . . . . . . . . . . . . .4.5V to 16V
Logic Inputs (INA, INB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to V DD
Outputs (OUTA, OUTB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to V DD
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4. θ JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379 for details.
5. For θ JC , the “case temp” location is the center of the exposed metal pad on the package underside.
6. The average output current, when driving a power MOSFET or similar capacitive load, is the average of the rectified output current. The peak output
currents of this driver are self limiting by transconductance or r DS(ON) and do not required any external components to minimize the peaks. If the
output is driving a non-capacitive load, such as an LED, maximum output current must be limited by external means to less than the specified
absolute maximum.
DC Electrical Specifications V DD = 12V, GND = 0V, No load on OUTA or OUTB, unless otherwise specified. Boldface limits apply over
the operating junction temperature range, -40°C to +125°C.
T J = +25°C
T J = -40°C to +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
(Note 7)
(Note 7)
UNITS
POWER SUPPLY
Voltage Range
V DD
-
-
-
4.5
16
V
V DD Quiescent Current
I DD
INx = GND
-
5
-
-
-
mA
INA = INB = 1MHz, square wave
-
25
-
-
mA
UnderVoltage
V DD Undervoltage Lock-out
(Note 9, Figure 9)
Hysteresis
V UV
INA = INB = True (Note 10)
-
-
3.3
~25
-
-
-
-
-
-
V
mV
INPUTs (Note 11)
Input Range for INA, INB
V IN
-
-
-
GND
V DD
V
Logic 0 Threshold
for INA, INB (Note 9)
Logic 1 Threshold
for INA, INB (Note 9)
Input Capacitance of
INA, INB (Note 8)
V IL
V IH
C IN
Option A, nominally 37% x 3.3V
Option B, nominally 37% x 5.0V
Option A, nominally 63% x 3.3V
Option B, nominally 63% x 5.0V
-
-
-
-
-
1.22
1.85
2.08
3.15
2
-
-
-
-
-
1.12
1.70
1.98
3.00
-
1.32
2.00
2.18
3.30
-
V
V
V
V
pF
4
FN7719.3
February 20, 2013
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| ISL89162FBEBZ-T | 功能描述:IC MOSFET DRIVER 2CH 6A 8SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89162FRTAZ | 功能描述:IC MOSFET DRIVER 2CH 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89162FRTAZ-T | 功能描述:IC MOSFET DRIVER 2CH 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89162FRTBZ | 功能描述:IC MOSFET DRIVER 2CH 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
| ISL89162FRTBZ-T | 功能描述:IC MOSFET DRIVER 2CH 6A 8TDFN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:6,000 系列:* |
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