收藏本站
参数资料
型号： ISL9N322AS3ST
厂商： FAIRCHILD SEMICONDUCTOR CORP
元件分类： JFETs
英文描述： N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
中文描述： 35 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件页数： 8/11页
文件大小： 140K
代理商： ISL9N322AS3ST
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
PSPICE Electrical Model
.SUBCKT ISL9N322AP3 2 1 3 ;
CA 12 8 7e-10
CB 15 14 7e-10
CIN 6 8 9.1e-10
rev April 2001
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 32.08
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.53e-9
LSOURCE 3 7 5.38e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.2e-3
RGATE 9 20 2.59
RLDRAIN 2 5 10
RLGATE 1 9 45.3
RLSOURCE 3 7 53.8
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 1.3e-2
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*110),6))}
.MODEL DBODYMOD D (IS = 8.3e-12 N = 1.08 RS = 9.9e-3 TRS1 = 8.9e-4 TRS2 = 1e-6 XTI = 2.7 CJO = 6.2e-10 TT = 7e-11 M
= 0.62)
.MODEL DBREAKMOD D (RS = 6e-1 TRS1 = 1e-3 TRS2 = -8.5e-6)
.MODEL DPLCAPMOD D (CJO = 3.1e-10 IS = 1e-30 N = 10 M = 0.46)
.MODEL MMEDMOD NMOS (VTO = 1.95 KP = 3.5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 2.59)
.MODEL MSTROMOD NMOS (VTO = 2.32 KP = 35 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.6 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 25.9 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1e-3 TC2 = -7e-7)
.MODEL RDRAINMOD RES (TC1 = 3.4e-2 TC2 = 1e-4)
.MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -2.2e-3 TC2 = -8e-6)
.MODEL RVTEMPMOD RES (TC1 = -2e-3 TC2 = 1.05e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF = -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF = 0.3)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.3 VOFF = -0.5)
.ENDS
Note: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
相关PDF资料
PDF描述
ISL9N322AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9N327AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
ISL9R2480G2 24A, 800V Stealth⑩ Diode
ISL9R860S3ST Choke; Inductance:1.5mH; Current Rating:4A; Leaded Process Compatible:Yes; Resistance:0.02ohm
ISL9R860PF2 8A, 600V Stealth Diode
相关代理商/技术参数
参数描述
ISL9N327AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N7030BLP3 功能描述:MOSFET 30V 0.009 Ohm N-Ch Logic Level 74a RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9N7030BLS3ST 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ISL9R1560G2 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R1560G2_Q 功能描述:整流器 15A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*