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参数资料
| 型号： | ISL9N327AD3ST |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| 中文描述： | 20 A, 30 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 4/11页 |
| 文件大小： | 185K |
| 代理商： | ISL9N327AD3ST |
2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
I
Figure 5. Transfer Characteristics
Figure 6. Saturation Characteristics
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Typical Characteristic
(Continued)
0
5
10
15
20
25
30
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
5
10
15
20
25
30
0
0.5
1.0
1.5
2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5V
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 3V
20
30
40
50
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 20A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
=20A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
0.9
1.0
1.1
1.2
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
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