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参数资料
| 型号： | ISL9R8120P2 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 2219K |
| 描述： | 8 AMP 1200V STEALTH DIODE |
| 标准包装： | 400 |
| 系列： | Stealth™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 1200V（1.2kV） |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 3.3V @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 300ns |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 1200V |
| 电容@ Vr, F： | 30pF @ 10V，1MHz |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220-2L |
| 包装： | 管件 |
| 其它名称： | Q1563503 |
ISL9R8120P2
,
ISL9R8120S3S
8
A,
1200
V,
STEALTH? Diode
ISL9R8120P2,
ISL9R8120S3S
Features
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
TC
= 25°C unless otherwise noted
Symbol
Parameter
Rating
Unit
VRRM
Repetitive Peak Reverse Voltage
1200 V
VRWM
Working Peak Reverse Voltage
1200 V
VR
DC Blocking Voltage
1200 V
IF(AV)
Average Rectified Forward Current (TC
= 105
oC)
8
A
IFRM
Repetitive Peak Surge Current
(20
kHz Square Wave)
16
A
IFSM
Nonrepetitive Peak
S
urge Current
(H
alfwave 1 Phase 60
Hz)
100
A
PD
Power Dissipation
71
W
EAVL
Avalanche Energy
(1
A,
40
mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 150 °C
TL
TPKG
Maximum Temperature for Soldering
Leads at
0.
063
in (1.6
mm)
from Case for 10
s
Package Body for 10s,
S
ee Application Note
A
N-7528
300
260
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
JEDEC TO-220AC
ANODE
K
A
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
JEDEC TO-263AB
CATHODE
(FLANGE)
N / C
ANODE
Package
Symbol
?
Stealth Recovery trr
= 300 ns (@
IF
= 8 A)
? Max Forward Voltage, VF
= 3.3 V (@ T
C
= 25°C)
?
1200
V Reverse Voltage and High Reliability
? Avalanche Energy Rated
? RoHS compliant
tm
June
200
2
8
A, 1200
V, STEALTH? Diode
The ISL9R8120P2, ISL9R8120S3S is a STEALTH? diode
optimized for low loss performance in high frequency hard
switched applications. The STEALTH?
family exhibits low
reverse recovery
current (I
RM(REC)) and exceptionally soft
recovery under typical operating conditions. This device is
intended for use as a free wheeling or boost diode in power
supplies
and other power switching applications. The low
IRM(REC)
and short ta phase reduce loss
in s
witching
transistors. The soft recovery minimizes ringing, expanding
the range of conditions under which the diode may be
operated without the use of additional snubber circuitry.
Consider using the STEALTH? diode with an SMPS IGBT to
provide the most efficient and highest power density design
at lower cost.
?2002
Fairchild
Semiconductor Corporation
ISL9R8120P2, ISL9R8120S3S
Rev.
B
www.fairchildsemi.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL9R8120P2 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bridge Rectifier 制造商:Fairchild Semiconductor Corporation 功能描述:FAST DIODE, 8A, 1.2KV, TO-220AC |
| ISL9R8120P2 | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE FAST 8A 1200V TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE, FAST, 8A, 1200V, TO-220 |
| ISL9R8120P2_Q | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R8120S3ST | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R8120S3ST_Q | 功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
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