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参数资料
| 型号： | ISL9R860PF2 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 502K |
| 描述： | DIODE STEALTH 600V 8A TO-220F |
| 标准包装： | 50 |
| 系列： | Stealth™ |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 600V |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 2.4V @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 30ns |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 600V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 全封装，隔离接片 |
| 供应商设备封装： | TO-220F |
| 包装： | 管件 |
| 其它名称： | ISL9R860PF2-ND ISL9R860PF2FS |
ISL9R860PF2
—
STEALTH? Diode
ISL9R860PF2
8 A, 600 V, STEALTHTM
Diode
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Unit
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current (TC
= 75
oC)
8
A
IFRM
Repetitive Peak Surge Current
(20
kHz Square Wave)
16
A
IFSM
Nonrepetitive Peak
S
urge Current
(H
alfwave 1 Phase 60
Hz)
100
A
PD
Power Dissipation
26
W
EAVL
Avalanche Energy
(1
A,
40
mH)
20
mJ
TJ, TSTG
Operating and Storage Temperature Range
-55 to 150 °C
TL
Maximum Temperature for Soldering
Leads at
0.
063in (1.6mm)
from Case for 10s
300
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
ANODE
TO-220F-2L
Package
Symbol
Features
?
Stealth Recovery trr
= 28 ns (@I
F
= 8 A)
? Max Forward Voltage, VF
= 2.4 V (@ T
C
= 25°C)
?
600
V Reverse Voltage and High Reliability
? Avalanche Energy Rated
?
RoHS Compliant
The ISL9R860PF2 is a STEALTH? diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH? family exhibits low reverse recovery current (Irr) and
exceptionally soft recovery under typical operating conditions.
This
device is intended for use as a free wheeling or boost diode in
power supplies and other power switching applications. The low Irr
and short ta phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use of
additional snubber circuitry. Consider using the STEALTH? diode
with an SMPS IGBT to provide the most efficient and highest power
density design at lower cost.
?2003
Fairchild
Semiconductor Corporation
ISL9R860PF2
Rev.
C1
www.fairchildsemi.com
1
Description
November 2013
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ISL9R860S2 | 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R860S3ST | 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R860S3ST_NL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| ISL9R860S3ST_Q | 功能描述:整流器 8A 600V RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| ISL9R860W2 | 功能描述:二极管 - 通用，功率，开关 WFR 600V 8A HFST ULTRASOFT PWR RECT RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
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