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参数资料
| 型号： | ISPLSI 2032VE-110LTN48 |
| 厂商： | Lattice Semiconductor Corporation |
| 文件页数： | 12/16页 |
| 文件大小： | 0K |
| 描述： | IC PLD ISP 32I/O 10NS 48TQFP |
| 标准包装： | 250 |
| 系列： | ispLSI® 2000VE |
| 可编程类型： | 系统内可编程 |
| 最大延迟时间 tpd(1)： | 10.0ns |
| 电压电源 - 内部： | 3 V ~ 3.6 V |
| 逻辑元件/逻辑块数目： | 8 |
| 宏单元数： | 32 |
| 门数： | 1000 |
| 输入/输出数： | 32 |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 48-LQFP |
| 供应商设备封装： | 48-TQFP（7x7） |
| 包装： | 托盘 |
| 其它名称： | ISPLSI2032VE-110LTN48 |
Specifications ispLSI 2032VE
4
Switching Test Conditions
Input Pulse Levels
Table 2-0003/2032VE
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
≤ 1.5 ns
Output Load Conditions (see Figure 2)
DC Electrical Characteristics
Over Recommended Operating Conditions
Figure 2. Test Load
+ 3.3V
R1
R2
CL*
Device
Output
Test
Point
*CL includes Test Fixture and Probe Capacitance.
0213A/2032VE
TEST CONDITION
R1
R2
CL
A
316Ω
348Ω
35pF
B
∞
348Ω
35pF
316Ω
348Ω
35pF
Active High
Active Low
C
316Ω
348Ω
5pF
∞
348Ω
5pF
Active Low to Z
at V +0.5V
OL
Active High to Z
at V
-0.5V
OH
Table 2-0004A/2032VE
VOL
SYMBOL
1. One output at a time for a maximum duration of one second. V
= 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using two 16-bit counters.
3. Typical values are at V = 3.3V and T = 25°C.
4. Maximum I
varies widely with specific device configuration and operating frequency. Refer to Power Consumption section
of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate
maximum I
.
5. Unused inputs at V = 0V.
Table 2-0007/2032VE
1
VOH
IIH
IIL
IIL-isp
PARAMETER
IIL-PU
IOS
2, 4, 5
ICC
Output Low Voltage
Output High Voltage
Input or I/O High Leakage Current
Input or I/O Low Leakage Current
BSCAN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I
= -4 mA
V
≤ V ≤ 5.25V
0V ≤ V ≤ V (Max.)
0V ≤ V ≤ V
V = 3.3V, V
= 0.5V
V = 0.0V, V = 3.0V
f
= 1MHz
OL
OH
IN
IL
IN
IL
IN
IL
CC
OUT
CLOCK
IL
IH
CONDITION
MIN.
TYP.
MAX.
UNITS
3
–
2.4
–
80
-300/-225
0.4
–
10
-10
10
-150
-100
V
μA
mA
CC
IL
A
OUT
–
Others
mA
–
65
CC
IN
CC
(V
- 0.2)V ≤ V ≤ V
CC
IN
CC
SELECT
DEVICES
DISCONTINUED
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ispLSI2032VE-110LTN48 | 功能描述:CPLD - 复杂可编程逻辑器件 USE ispMACH 4000V RoHS:否 制造商:Lattice 系列: 存储类型:EEPROM 大电池数量:128 最大工作频率:333 MHz 延迟时间:2.7 ns 可编程输入/输出端数量:64 工作电源电压:3.3 V 最大工作温度:+ 90 C 最小工作温度:0 C 封装 / 箱体:TQFP-100 |
| ISPLSI2032VE110LTN48I | 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| ISPLSI2032VE135LB49 | 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| ISPLSI2032VE-135LB49 | 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
| ISPLSI2032VE135LB49I | 制造商:LATTICE 制造商全称:Lattice Semiconductor 功能描述:3.3V In-System Programmable High Density SuperFAST⑩ PLD |
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