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| 型号： | IX6R11S3 |
| 厂商： | IXYS |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | HALF BRIDGE DRIVER 16-SOIC |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 46 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 120ns |
| 电流 - 峰： | 6A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 10 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
| 配用： | EV6R11S3-ND - BOARD EVALUATION IX6R11S3 |
| 其它名称： | Q2251412 |
IX6R11
600 Volt, 6 Ampere High & Low-side Driver
for N-Channel MOSFETs and IGBTs
Features
? Floating High Side Driver with boot-strap Power
supply along with a Low Side Driver.
? Fully operational to 600V
? ± 50V/ns dV/dt immunity
? Gate drive power supply range: 10 - 35V
? Undervoltage lockout for both output drivers
? Separate Logic power supply range: 3.3V to V CL
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up protected over entire
operating range
? High peak output current: 6A
? Low output impedance
? Low power supply current
? Immune to negative voltage transients
General Description
The IX6R11 Bridge Driver for N-channel MOSFETs and
IGBTs with a high side and low side output, whose input
signals reference the low side. The High Side driver can
control a MOSFET or IGBT connected to a positive bus
voltage up to 600V. The logic input stages are
compatible with TTL or CMOS, have built-in hysteresis
and are fully immune to latch up over the entire
operating range. The IX6R11 can withstand dV/dt on the
output side up to ± 50V/ns.
Ordering Information
The IX6R11 is available in the 14-Pin DIP, the 16-Pin
SOIC, and the heat-sinkable 18-Pin SOIC Cooltab TM
packages.
Part Number Package Type
Applications
IX6R11P7
14-Pin DIP
?
?
?
?
Driving MOSFETs and IGBTs in half-bridge circuits
High voltage, high side and low side drivers
Motor Controls
Switch Mode Power Supplies (SMPS)
IX6R11S3
IX6R11S6
16-Pin SOIC
18-Pin SOIC
?
?
DC to DC Converters
Class D Switching Amplifiers
Warning: The IX6R11 is ESD Sensitive
Precaution: when performing the High-Voltage tests,
adequate safety precautions should be taken!
*Operational voltage rating of 600V determined in a typical half-bridge circuit configuration (refer to Figure 10 and Figure 11).
Operational voltage in other circuit configurations may vary.
Figure 1. Typical Circuit Connection
? 2007 IXYS CORPORATION All rights reserved
Up to 600V
DS99037G(10/07)
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相关代理商/技术参数 |
参数描述 |
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| IX6R11S3T/R | 功能描述:功率驱动器IC 6 Amps 35V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6R11S6 | 功能描述:功率驱动器IC Half Bridge Chipset Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6R11S6T/R | 功能描述:功率驱动器IC 6 Amps 35V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IX6S11S6 | 功能描述:IC DRVR HALF BRIDGE 6A 18-SOIC RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IX6S11S6T/R | 功能描述:功率驱动器IC 6 Amps 35V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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