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参数资料
| 型号： | IXDD404SI-16 |
| 厂商： | IXYS |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR LS 4A DUAL 16SOIC |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 47 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 36ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
| 配用： | EVDD404-ND - EVALUATION BOARD FOR IXDD404 DVR |
IXDD404
4 Amp Dual Low-Side Ultrafast MOSFET Driver
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up Protected
? High Peak Output Current: 4A Peak
? Wide Operating Range: 4.5V to 35V
? Ability to Disable Output under Faults
? High Capacitive Load
Drive Capability: 1800pF in <15ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
? Two identical drivers in single chip
Applications
General Description
The IXDD404 is comprised of two 4 Amp CMOS high speed
MOSFET drivers. Each output can source and sink 4 A of
peak current while producing voltage rise and fall times of less
than 15ns to drive the latest IXYS MOSFETS & IGBT's. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, cross conduction/current shoot-
through is virtually eliminated in the IXDD404. Improved speed
and drive capabilities are further enhanced by very low,
matched rise and fall times.
Additionally, each driver in the IXDD404 incorporates a unique
ability to disable the output under fault conditions. When a
logical low is forced into the Enable input of a driver, both of it's
final output stage MOSFETs (NMOS and PMOS) are turned
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Driving MOSFETs and IGBTs
Limiting di/dt under Short Circuit
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
off. As a result, the respective output of the IXDD404 enters a
tristate mode and achieves a Soft Turn-Off of the MOSFET/
IGBT when a short circuit is detected. This helps prevent
damage that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage transient.
The IXDD404 is available in the standard 8 pin P-DIP (PI),
SOIC-8 (SIA) and SOIC-16 (SIA-16) packages. For enhanced
thermal performance, the SOP-8 and SOP-16 are also avail-
able with an exposed grounded metal back package as the SI
and SI-16 respectively.
Ordering Information
Part Number Package Type Temp. Range
IXDD404PI 8-Pin PDIP
Configuration
IXDD404SI 8-Pin SOIC with Grounded Metal Back
IXDD404SIA 8-Pin SOIC
IXDD404SI-16 16-Pin SOIC with Grounded Metal Back
IXDD404SIA-16
16-Pin SOIC
-55 ° C to
+125 ° C
Dual Non
Inverting With
Enable
NOTE: Mounting or solder tabs on all packages are connected to ground
Figure 1 - Functional Diagram
Vcc
ENA
INB
ENB
GND
Copyright ? IXYS CORPORATION 2004
200k
200k
First Release
OUTA
OUTB
DS99046D(11/10)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDD404SIA | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD404SIA-16 | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD408CI | 功能描述:功率驱动器IC 40V 8A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD408PI | 功能描述:功率驱动器IC 40V 8A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD408SI | 功能描述:功率驱动器IC 40V 8A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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