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| 型号： | IXDD408YI |
| 厂商： | IXYS |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR LS 8A SGL 5TO-263 |
| 产品变化通告： | Discontinuation Notice 15/Jun/2010 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 38ns |
| 电流 - 峰： | 8A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 25 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-6，D²Pak（5 引线+接片），TO-263BA |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 管件 |
| 配用： | EVDD408-ND - EVALUATION BOARD FOR IXDD408 DVR |
IXDD408PI / 408SI / 408YI / 408CI
8 Amp Low-Side Ultrafast MOSFET Driver
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes.
? Latch Up Protected
? High Peak Output Current: 8A Peak
? Operates from 4.5V to 25V
? Ability to Disable Output under Faults
? High Capacitive Load
Drive Capability: 2500pF in <15ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
Applications
General Description
The IXDD408 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and
IGBTs to their minimum switching time and maximum
practical frequency limits. The IXDD480 can source and
sink 8A of peak current while producing voltage rise and
fall times of less than 30ns. The input of the driver is
compatible with TTL or CMOS and is fully immune to
latch up over the entire operating range. Designed with
small internal delays, cross conduction/current shoot-
through is virtually eliminated in the IXDD408. Its features
and wide safety margin in operating voltage and power
make the IXDD408 unmatched in performance and value.
The IXDD408 incorporates a unique ability to disable the
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Driving MOSFETs and IGBTs
Limiting di/dt under Short Circuit
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
output under fault conditions. When a logical low is
forced into the Enable input, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD408 enters a tristate mode
and achieves a Soft Turn-Off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage
that could occur to the MOSFET/IGBT if it were to be
switched off abruptly due to a dv/dt over-voltage tran-
sient.
The IXDD408 is available in the standard 8-pin P-DIP (PI),
SOP-8 (SI), 5-pin TO-220 (CI) and in the TO-263 (YI)
surface-mount package.
Figure 1 - Functional Diagram
Copyright ? IXYS CORPORATION 2001 Patent Pending
First Release
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDD409CI | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD409PI | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD409SI | 功能描述:功率驱动器IC 9 Amps 40V 1.5 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD409YI | 功能描述:功率驱动器IC 40V 9A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDD414CI | 功能描述:功率驱动器IC 40V 14A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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