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参数资料
| 型号： | IXDF404PI |
| 厂商： | IXYS |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER LS 4A DUAL 8DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 36ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 25 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
IXDN404 / IXDI404 / IXDF404
Absolute Maximum Ratings (Note 1)
Operating Ratings
Parameter
Supply Voltage
All Other Pins
Value
40V
-0.3V to VCC + 0.3V
Parameter
Operating Temperature Range
Thermal Resistance (To Ambient)
Value
-55 oC to 125 oC
150oC
-65oC to 150oC
300oC
8 Pin PDIP (PI) ( θ JA )
16 Pin SOIC (SIA-16) ( θ JA )
Junction Temperature
Storage Temperature
Soldering Lead Temperature
(10 seconds maximum)
Thermal Resistance (Junction to Case) ( θ JC )
8 Pin SOIC (SI) 10 K/W
16 Pin SOIC (SI-16) 10 K/W
Electrical Characteristics
120 K/W
8 Pin SOIC (SIA) 110 K/W
110 K/W
θ JA with heat sink **
Heat sink area of 1 cm 2
8 Pin SOIC 95 K/W
16 Pin SOIC-CT 95 K/W
2
Heat sink area of 3 cm
8 Pin SOIC 85 K/W
16 Pin SOIC-CT 85 K/W
** Device soldered to metal back pane. Heat sink area is 1 oz.
copper on 1 side of 0.06" thick FR4 PC board.
Unless otherwise noted, T A = 25 o C, 4.5V ≤ V CC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions . All specifications are for one channel.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V IH
V IL
High input voltage
Low input voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
2.5
0.8
V
V
V IN
Input voltage range
-5
V CC + 0.3
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
Output resistance
V CC = 18V
2
2.5
?
@ Output High
R OL
Output resistance
V CC = 18V
1.5
2
?
@ Output Low
I PEAK
I DC
Peak output current
Continuous output
V CC = 18V
4
1
A
A
current
t R
t F
t ONDLY
Rise time
Fall time
On-time propagation
C L =1800pF Vcc=18V
C L =1800pF Vcc=18V
C L =1800pF Vcc=18V
16
13
36
18
17
40
ns
ns
ns
delay
t OFFDLY
Off-time propagation
C L =1800pF Vcc=18V
35
39
ns
delay
V CC
I CC
Power supply voltage
Power supply current
V IN = 3.5V
V IN = 0V
4.5
18
1
0
35
3
10
V
mA
μ A
V IN = + V CC
10
μ A
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDF404SI | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF404SI-16 | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF404SIA | 功能描述:功率驱动器IC 4 Amps 40V 2.5 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF404SIA-16 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Ampere Dual Low-Side Ultrafast MOSFET Drivers |
| IXDF502D1 | 功能描述:功率驱动器IC 2 Amps 35V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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