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参数资料
| 型号： | IXDF602SITR |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 13/13页 |
| 文件大小： | 0K |
| 描述： | 2A 8SOIC EXP MTL DUAL IN/NON-INV |
| 标准包装： | 2,000 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 带卷 (TR) |
I NTEGRATED C IRCUITS D IVISION
5.4.5 D2 (8-Pin DFN)
IXD_602
4.50
(0.177)
Pin 1
5.00 BSC
(0.197 BSC)
0. 8 0 / 1.00
(0.031 / 0.039)
0.20 REF
(0.00 8 REF)
0.35 x 45o
(0.014 x 45o)
0.95
(0.037)
4.00 BSC
(0.157 BSC)
0.10
0.45
(0.01 8 )
3.10
(0.122)
0.74 / 0. 8 3
(0.029 / 0.033)
(0.004)
1.20
(0.047)
2.60
(0.102)
Recommended PCB Land Pattern
3.03 / 3.10
(0.119 / 0.122)
Dimensions
0.95 BSC
(0.037 BSC)
Pin 1
0.30 / 0.45
(0.012 / 0.01 8 )
Pin 8
2.53 / 2.60
N OTE:
mm MI N / mm MAX
(inches MI N / inches MAX)
0.35 / 0.45 x 45o
(0.014 / 0.01 8 x 45o)
(0.100 / 0.102)
The exposed metal pad on the b ack of the D2 package sho u ld
b e connected to G N D. Pad is not s u ita b le for carrying c u rrent.
5.4.6 Tape & Reel Information for D2 Package
330.2 DIA.
4.00 ± 0.10 See N ote #2
? 1.55 ± 0.05
(13.00 DIA.)
R0.75 TYP
2.00 ± 0.05
1.75 ± 0.10
Top Co v er
Tape Thickness
0.102 MAX.
(0.004 MAX.)
5o MAX
(0.05)
5.50 ± 0.05
(0.05)
B 0 =5.40 ± 0.10
12.00 ± 0.30
Em b ossed Carrier
K 0 =1.90 ± 0.10
5o MAX
8 .00 ± 0.10
N OTES:
? 1.50 (MI N )
Em b ossment
0.30 ± 0.05
A 0 =4.25 ± 0.10
1. A 0 & B 0 meas u red at 0.3mm a b o v e b ase of pocket.
2. 10 pitches c u m u lati v e tol. ± 0.2mm
3. ( ) Reference dimensions only.
4. Unless other w ise specified, all dimensions in millimeters.
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make
changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in IXYS Integrated
Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its
products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other
applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical harm, injury, or death to a person or severe
property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes to its products at any time without notice.
Specification: DS-IXD_602-R05
?Copyright 2012, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
11/8/2012
R05
www.ixysic.com
13
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| IXDF604SITR | 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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