参数资料
型号: IXDF602SITR
厂商: IXYS Integrated Circuits Division
文件页数: 4/13页
文件大小: 0K
描述: 2A 8SOIC EXP MTL DUAL IN/NON-INV
标准包装: 2,000
配置: 低端
输入类型: 反相和非反相
延迟时间: 35ns
电流 - 峰: 2A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 35 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm Width)裸露焊盘
供应商设备封装: 8-SOIC-EP
包装: 带卷 (TR)
I NTEGRATED C IRCUITS D IVISION
1.5 Electrical Characteristics: T A = 25°C
Test Conditions: 4.5V < V CC < 35V, one channel (unless otherwise noted).
IXD_602
Parameter
Input Voltage, High
Input Voltage, Low
Input Current
Output Voltage, High
Output Voltage, Low
Output Resistance, High State
Output Resistance, Low State
Output Current, Continuous
Rise Time
Fall Time
On-Time Propagation Delay
Off-Time Propagation Delay
Power Supply Current
Conditions
4.5V < V CC < 18V
4.5V < V CC < 18V
0V < V IN < V CC
-
-
V CC =18V, I OUT =-10mA
V CC =18V, I OUT =10mA
Limited by package power
dissipation
V CC =18V, C LOAD =1000pF
V CC =18V, C LOAD =1000pF
V CC =18V, C LOAD =1000pF
V CC =18V, C LOAD =1000pF
V CC =18V, V IN =3.5V
V CC =18V, V IN =0V
V CC =18V, V IN =V CC
Symbol
V IH
V IL
I IN
V OH
V OL
R OH
R OL
I DC
t r
t f
t ondly
t offdly
I CC
Minimum
3.0
-
-
V CC -0.025
-
-
-
-
-
-
-
-
-
-
-
Typical
-
-
-
-
-
2.5
1.5
-
7.5
6.5
35
38
1
<1
<1
Maximum
-
0.8
±10
-
0.025
4
3
±1
15
15
60
60
3
10
10
Units
V
? A
V
?
A
ns
mA
? A
1.6 Electrical Characteristics: T A = - 40°C to +125°C
Test Conditions: 4.5V < V CC < 35V, one channel (unless otherwise noted).
Parameter
Input Voltage, High
Input Voltage, Low
Input Current
Output Voltage, High
Output Voltage, Low
Output Resistance, High State
Output Resistance, Low State
Output Current, Continuous
Rise Time
Fall Time
On-Time Propagation Delay
Off-Time Propagation Delay
Power Supply Current
Conditions
4.5V < V CC < 18V
4.5V < V CC < 18V
0V < V IN < V CC
-
-
V CC =18V, I OUT =-10mA
V CC =18V, I OUT =10mA
Limited by package power
dissipation
V CC =18V, C LOAD =1000pF
V CC =18V, C LOAD =1000pF
V CC =18V, C LOAD =1000pF
V CC =18V, C LOAD =1000pF
V CC =18V, V IN =3.5V
V CC =18V, V IN =0V
V CC =18V, V IN =V CC
Symbol
V IH
V IL
I IN
V OH
V OL
R OH
R OL
I DC
t r
t f
t ondly
t offdly
I CC
Minimum
3.3
-
-10
V CC -0.025
-
-
-
-
-
-
-
-
-
-
-
Maximum
-
0.65
10
-
0.025
6
5
±1
18
18
75
75
3.5
150
150
Units
V
? A
V
?
A
ns
mA
? A
4
www.ixysic.com
R05
相关PDF资料
PDF描述
3266W-1-100 TRIMMER 10 OHM 0.25W TH
MIC4422YM IC DRIVER MOSFET 9A LS 8-SOIC
CPC1590PTR MOSFET GATE DVR ISO 8-FLATPACK
MIC4421AZM TR IC MOSFET DVR HS 9A INV 8SOIC
3009P-1-501Z TRIMMER 500 OHM 0.75W TH
相关代理商/技术参数
参数描述
IXDF604PI 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF604SI 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF604SIA 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF604SIATR 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDF604SITR 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube