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| 型号： | IXDF604SI |
| 厂商： | IXYS Integrated Circuits Division |
| 文件页数： | 1/13页 |
| 文件大小： | 0K |
| 描述： | IC GATE DVR 4A DUAL IN/NON 8SOIC |
| 标准包装： | 100 |
| 配置： | 低端 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 29ns |
| 电流 - 峰： | 4A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 35 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 管件 |
| 产品目录页面： | 2629 (CN2011-ZH PDF) |
| 其它名称： | CLA334 |
IXD_604
4-Ampere Dual Low-Side
I NTEGRATED C IRCUITS D IVISION
Features
? 4A Peak Source/Sink Drive Current
? Wide Operating Voltage Range: 4.5V to 35V
? -40°C to +125°C Extended Operating Temperature
Range
? Logic Input Withstands Negative Swing of up to 5V
? Outputs May be Connected in Parallel for Higher
Drive Current
? Matched Rise and Fall Times
? Low Propagation Delay Time
? Low, 10 ? A Supply Current
? Low Output Impedance
Applications
Ultrafast MOSFET Drivers
Description
The IXDD604/IXDF604/IXDI604/IXDN604 dual
high-speed gate drivers are especially well suited for
driving the latest IXYS MOSFETs and IGBTs. Each of
the two outputs can source and sink 4A of peak
current while producing voltage rise and fall times of
less than 10ns. The input of each driver is virtually
immune to latch up, and proprietary circuitry
eliminates cross conduction and current
“shoot-through.” Low propagation delay and fast,
matched rise and fall times make the IXD_604 family
ideal for high-frequency and high-power applications.
The IXDD604 is a dual non-inverting driver with an
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?
?
?
?
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Efficient Power MOSFET and IGBT Switching
Switch Mode Power Supplies
Motor Controls
DC to DC Converters
Class-D Switching Amplifiers
Pulse Transformer Driver
enable. The IXDN604 is a dual non-inverting driver,
the IXDI604 is a dual inverting driver, and the IXDF604
has one inverting driver and one non-inverting driver.
The IXD_604 family is available in a standard 8-pin
DIP (PI), 8-pin SOIC (SIA), 8-pin Power SOIC with an
exposed metal back (SI), and an 8-pin DFN (D2)
Pb
Ordering Information
e 3
package.
Part Number
IXDD604D2TR
IXDD604PI
Logic
Configuration
E N A
Package Type
8-Pin DFN
8-Pin DIP
Packing
Method
Tape & Reel
Tube
Quantity
2000
50
IXDD604SI
IXDD604SITR
IXDD604SIA
I N A
E N B
I N B
A
B
OUTA
OUTB
8-Pin Power SOIC with Exposed Metal Back
8-Pin Power SOIC with Exposed Metal Back
8-Pin SOIC
Tube
Tape & Reel
Tube
100
2000
100
IXDD604SIATR
IXDF604PI
8-Pin SOIC
8-Pin DIP
Tape & Reel
Tube
2000
50
IXDF604SI
I N A
A
OUTA
8-Pin Power SOIC with Exposed Metal Back
Tube
100
IXDF604SITR
8-Pin Power SOIC with Exposed Metal Back
Tape & Reel
2000
IXDF604SIA
I N B
B
OUTB
8-Pin SOIC
Tube
100
IXDF604SIATR
IXDI604PI
8-Pin SOIC
8-Pin DIP
Tape & Reel
Tube
2000
50
IXDI604SI
I N A
A
OUTA
8-Pin Power SOIC with Exposed Metal Back
Tube
100
IXDI604SITR
8-Pin Power SOIC with Exposed Metal Back
Tape & Reel
2000
IXDI604SIA
I N B
B
OUTB
8-Pin SOIC
Tube
100
IXDI604SIATR
IXDN604PI
8-Pin SOIC
8-Pin DIP
Tape & Reel
Tube
2000
50
IXDN604SI
I N A
A
OUTA
8-Pin Power SOIC with Exposed Metal Back
Tube
100
IXDN604SITR
8-Pin Power SOIC with Exposed Metal Back
Tape & Reel
2000
IXDN604SIA
I N B
B
OUTB
8-Pin SOIC
Tube
100
IXDN604SIATR
DS-IXD_604-R05
8-Pin SOIC
www.ixysic.com
Tape & Reel
2000
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDF604SIA | 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF604SIATR | 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDF604SITR | 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDH20N120 | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDH20N120AU1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-247AD |
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