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参数资料
| 型号： | IXDI509SIAT/R |
| 厂商： | IXYS |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRIVER SGL 9A 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 18ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 30 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
IXDI509 / IXDN509
Supply Bypassing, Grounding Practices And Output Lead inductance
When designing a circuit to drive a high speed MOSFET
utilizing the IXD_509, it is very important to observe certain
design criteria in order to optimize performance of the driver.
Particular attention needs to be paid to Supply Bypassing ,
Grounding , and minimizing the Output Lead Inductance .
Say, for example, we are using the IXD_509 to charge a 5000pF
capacitive load from 0 to 25 volts in 25ns .
Using the formula: I C =C( ? V/ ? t), where ? V=25V C=5000pF &
? t=25ns, we can determine that to charge 5000pF to 25 volts
in 25ns will take a constant current of 5A. (In reality, the charging
current won’t be constant, and will peak somewhere around
8A).
SUPPLY BYPASSING
In order for our design to turn the load on properly, the IXD_509
must be able to draw this 5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is an order of
magnitude larger than the load capacitance. Usually, this
would be achieved by placing two different types of bypassing
capacitors, with complementary impedance curves, very close
to the driver itself. (These capacitors should be carefully
selected and should have low inductance, low resistance and
high-pulse current-service ratings). Lead lengths may radiate
at high frequency due to inductance, so care should be taken
to keep the lengths of the leads between these bypass
capacitors and the IXD_509 to an absolute minimum.
GROUNDING
In order for the design to turn the load off properly, the IXD_509
must be able to drain this 5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXD_509
and its load. Path #2 is between the IXD_509 and its power
supply. Path #3 is between the IXD_509 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXD_509.
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 0.2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twisted-
pair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
of the driver, and connected directly to the ground terminal of the
load.
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相关PDF资料 |
PDF描述 |
|---|---|
| VI-BN2-CW-F1 | CONVERTER MOD DC/DC 15V 100W |
| IXDI509SIA | IC GATE DRIVER SGL 9A 8-SOIC |
| EBC17DRTH-S13 | CONN EDGECARD 34POS .100 EXTEND |
| VI-BN1-CX-F3 | CONVERTER MOD DC/DC 12V 75W |
| IXDI509PI | IC GATE DRIVER SGL 9A 8-DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDI514 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers |
| IXDI514D1 | 功能描述:功率驱动器IC 14 Amps 35V 1 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDI514D1T/R | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDI514D1TR | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:14 Ampere Low-Side Ultrafast MOSFET Drivers |
| IXDI514PI | 功能描述:功率驱动器IC 14 Amps 40V 1.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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