参数资料
型号: IXDI509SIAT/R
厂商: IXYS
文件页数: 3/12页
文件大小: 0K
描述: IC GATE DRIVER SGL 9A 8-SOIC
标准包装: 2,500
配置: 低端
输入类型: 反相
延迟时间: 18ns
电流 - 峰: 9A
配置数: 1
输出数: 1
电源电压: 4.5 V ~ 30 V
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
IXDI509 / IXDN509
Absolute Maximum Ratings (1)
Operating Ratings (2)
Parameter
Value
Parameter
Value
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
35 V
-0.3 V to V CC + 0.3V
150 ° C
-65 ° C to 150 ° C
300 ° C
Operating Supply Voltage 4.5V to 30V
Operating Temperature Range -55 ° C to 125 ° C
Package Thermal Resistance *
8-PinPDIP (PI) θ J-A (typ) 125 ° C/W
8-Pin SOIC (SIA) θ J-A (typ) 200 ° C/W
6-Lead DFN (D1) θ J-A (typ) 125-200 ° C/W
6-Lead DFN (D1) θ J-C (max) 2.0 ° C/W
6-Lead DFN (D1) θ J-S (typ) 6.3 ° C/W
Electrical Characteristics @ T A = 25 o C (3)
Unless otherwise noted, 4.5V ≤ V CC ≤ 30V .
All voltage measurements with respect to GND. IXD_509 configured as described in Test Conditions . (4)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V IH
V IL
High input voltage
Low input voltage
4.5V ≤ V CC ≤ 18V
4.5V ≤ V CC ≤ 18V
2.4
0.8
V
V
V IN
Input voltage range
-5
V CC + 0.3
V
I IN
Input current
0V ≤ V IN ≤ V CC
-10
10
μ A
V OH
V OL
High output voltage
Low output voltage
V CC - 0.025
0.025
V
V
R OH
R OL
High state output resistance
Low state output resistance
V CC = 18V
V CC = 18V
0.6
0.4
1
0.8
?
?
I PEAK
I DC
Peak output current
Continuous output current
V CC = 15V
Limited by package power
dissipation
9
2
A
A
t R
t F
t ONDLY
t OFFDLY
V CC
I CC
Rise time
Fall time
On-time propagation delay
Off-time propagation delay
Power supply voltage
Power supply current
C LOAD =10,000pF V CC =18V
C LOAD =10,000pF V CC =18V
C LOAD =10,000pF V CC =18V
C LOAD =10,000pF V CC =18V
V CC = 18V, V IN =0V
V IN = 3.5V
4.5
25
23
18
19
18
1
45
40
35
30
30
75
3
ns
ns
ns
ns
V
μ A
mA
V IN = V CC
IXYS reserves the right to change limits, test conditions, and dimensions.
3
75
mA
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