参数资料
型号: IXFH14N100
厂商: IXYS
文件页数: 2/4页
文件大小: 0K
描述: MOSFET N-CH 1000V 14A TO-247
标准包装: 30
系列: HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 1000V(1kV)
电流 - 连续漏极(Id) @ 25° C: 14A
开态Rds(最大)@ Id, Vgs @ 25° C: 750 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大): 4.5V @ 4mA
闸电荷(Qg) @ Vgs: 220nC @ 10V
输入电容 (Ciss) @ Vds: 4500pF @ 25V
功率 - 最大: 360W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
IXFH14N100
IXFH15N100
IXFT14N100
IXFT15N100
IXFX15N100
IXFX14N100
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
TO-247 AD (IXFH) Outline
g fs
C iss
C oss
C rss
t d(on)
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
6
10
4500
430
150
27
S
pF
pF
pF
ns
t r
t d(off)
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 W (External),
30
120
ns
ns
Dim. Millimeter
Min. Max.
Inches
Min. Max.
t f
30
ns
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
220
30
85
nC
nC
nC
C
D
E
F
15.75 16.26
3.55 3.65
4.32 5.49
5.4 6.2
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
R thJC
R thCK
(TO-247 Case Style)
0.25
0.35
K/W
K/W
G
H
J
1.65 2.13
- 4.5
1.0 1.4
0.065 0.084
- 0.177
0.040 0.055
K
10.8 11.0
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
Source-Drain Diode
Characteristic Values
N
1.5 2.49
0.087 0.102
(T J = 25 ° C, unless otherwise specified)
PLUS247 TM (IXFX) Outline
Symbol
Test Conditions
min. typ.
max.
I S
I SM
V GS = 0 V
Repetitive;
pulse width limited by T JM
14N100
15N100
14N100
15N100
14
15
56
60
A
A
A
A
V SD
I F = I S , V GS = 0 V,
Pulse test, t £ 300 m s, duty cycle d £ 2 %
1.5
V
t rr
Q RM
I RM
I F = I S
-di/dt = 100 A/ m s,
V R = 100 V
T J
T J
T J
T J
T J
T J
= 25 ° C
= 125 ° C
= 25 ° C
= 125 ° C
= 25 ° C
= 125 ° C
1
2
10
15
200
350
ns
ns
m C
m C
A
A
Dim.
A
A 1
A 2
b
b 1
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
b 2
C
D
2.92 3.12
0.61 0.80
20.80 21.34
.115 .123
.024 .031
.819 .840
TO-268AA (D 3 PAK)
Dim.
A
A 1
A 2
b
Millimeter
Min. Max.
4.9 5.1
2.7 2.9
.02 .25
1.15 1.45
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
E
e
L
L1
Q
R
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
b 2
C
D
E
E 1
e
H
L
L1
L2
L3
L4
1.9 2.1
.4 .65
13.80 14.00
15.85 16.05
13.3 13.6
5.45 BSC
18.70 19.10
2.40 2.70
1.20 1.40
1.00 1.15
0.25 BSC
3.80 4.10
.75 .83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Min. Recommended Footprint
? 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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