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| 型号： | IXFH340N075T2 |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 75V 340A TO-247 |
| 标准包装： | 30 |
| 系列： | TrenchT2™ HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 75V |
| 电流 - 连续漏极(Id) @ 25° C： | 340A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.2 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 300nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 19000pF @ 25V |
| 功率 - 最大： | 935W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXFH340N075T2
IXFT340N075T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
65
110
19
S
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
2230
pF
1
2
3
?P
C rss
490
pF
R Gi
t d(on)
Gate Input Resistance
Resistive Switching Times
1.7
26
Ω
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCH
V GS = 10V, V DS = 0.5 ? V DSS , I D = 100A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
50
60
35
300
68
70
0.21
ns
ns
ns
nC
nC
nC
0.16 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
.610 .640
Source-Drain Diode
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 170A, V GS = 0V
-di/dt = 100A/ μ s
V R = 37.5V
75
4.4
165
340
1360
1.3
A
A
V
ns
A
nC
R 4.32 5.49
S 6.15 BSC
TO-268 (IXFT) Outline
.170 .216
242 BSC
Note 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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