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| 型号： | IXFK102N30P |
| 厂商： | IXYS |
| 文件页数： | 2/2页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 300V 102A TO-264 |
| 标准包装： | 25 |
| 系列： | PolarHT™ HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 300V |
| 电流 - 连续漏极(Id) @ 25° C： | 102A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 4mA |
| 闸电荷(Qg) @ Vgs： | 224nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7500pF @ 25V |
| 功率 - 最大： | 700W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-264-3，TO-264AA |
| 供应商设备封装： | TO-264 |
| 包装： | 散装 |
IXFK 102N30P
TO-264 Outline
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
45
57
7500
1150
230
30
S
pF
pF
pF
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 60 A
R G = 3.3 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
28
130
30
224
50
110
0.15
ns
ns
ns
nC
nC
nC
0.18 ° C/W
° C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00 0.25
20.32 20.83
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
L1
P
Q
Q1
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
.090 .102
.125 .144
.239 .247
.330 .342
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
R
R1
S
T
3.81 4.32
1.78 2.29
6.04 6.30
1.57 1.83
.150 .170
.070 .090
.238 .248
.062 .072
I S
I SM
V SD
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
102
250
1.5
A
A
V
t rr
Q RM
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
0.8
200 ns
μ C
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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