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参数资料
| 型号： | IXFT24N90P |
| 厂商： | IXYS |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH TO-268 |
| 产品目录绘图： | TO-268 Package |
| 特色产品： | 900V Polar HiPerFET? Power MOSFETs |
| 标准包装： | 30 |
| 系列： | Polar™ HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 900V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 420 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 6.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 130nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7200pF @ 25V |
| 功率 - 最大： | 660W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-268-3，D³Pak（2 引线+接片），TO-268AA |
| 供应商设备封装： | TO-268 |
| 包装： | 管件 |
IXFH24N90P
IXFT24N90P
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
R Gi
C iss
C oss
C rss
t d(on)
V DS = 20V, I D = 0.5 ? I D25 , Note 1
Gate input resistance
V GS = 0V, V DS = 25V, f = 1MHz
10
16
1.1
7200
490
60
46
S
Ω
pF
pF
pF
ns
?P
t r
Resistive Switching Times
40
ns
e
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-247)
68
38
130
50
58
0.25
ns
ns
nC
nC
nC
0.19 ° C /W
° C /W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
Source-Drain Diode
T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
R 4.32 5.49
S 6.15 BSC
.170 .216
242 BSC
I S
V GS = 0V
24
A
I SM
V SD
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
96
1.5
A
V
TO-268 Outline
t rr
Q RM
I RM
I F = 12A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
1.1
11
300 ns
μ C
A
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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| IXFT26N60P | 功能描述:MOSFET 600V 26A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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