参数资料
型号: IXFV36N50P
厂商: IXYS
文件页数: 1/6页
文件大小: 0K
描述: MOSFET N-CH 500V 36A PLUS220
产品目录绘图: PLUS220 Package
标准包装: 50
系列: Polar™ HiPerFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 500V
电流 - 连续漏极(Id) @ 25° C: 36A
开态Rds(最大)@ Id, Vgs @ 25° C: 170 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大): 5V @ 4mA
闸电荷(Qg) @ Vgs: 93nC @ 10V
输入电容 (Ciss) @ Vds: 5500pF @ 25V
功率 - 最大: 540W
安装类型: 通孔
封装/外壳: TO-220-3(SMT)标片
供应商设备封装: PLUS220
包装: 管件
Polar TM HiPerFET TM
Power MOSFETs
N-Channel Enhancement Mode
IXFV36N50PS
IXFV36N50P
IXFH36N50P
IXFT36N50P
V DSS
I D25
R DS(on)
t rr
=
=
500V
36A
170m Ω
200ns
Avalanche Rated
PLUS220SMD (IXFV...S)
Fast Intrinsic Diode
G
S
D (Tab)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Maximum Ratings
500
500
V
V
PLUS220 (IXFV)
V GSS
V GSM
Continuous
Transient
± 30
± 40
V
V
G
D
S
D (Tab)
I D25
I DM
I A
E AS
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
36
90
36
1.5
A
A
A
J
TO-268 (IXFT)
G
dv/dt
P D
T J
T JM
T stg
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
10
540
-55 ... +150
150
-55 ... +150
V/ns
W
° C
° C
° C
TO-247 (IXFH)
S
D (Tab)
T L
T SOLD
M d
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
300
260
1.13/10
° C
° C
Nm/lb.in.
G
D
S
D (Tab)
F C
Weight
Mounting Force
PLUS220
TO-268
TO-247
(PLUS220)
20..120 /4.5..27
4.0
4.0
6.0
N/lb.
g
g
g
G = Gate
S = Source
Features
D = Drain
Tab = Drain
Low Package Inductance
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Fast Intrinsic Rectifier
Low R DS(on) and Q G
BV DSS
V GS = 0V, I D = 250 μ A
500
V
V GS(th)
V DS = V GS , I D = 4mA
3.0
5.0
V
Advantages
I GSS
I DSS
V GS = ± 30V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 125 ° C
± 100 nA
25 μ A
500 μ A
High Power Density
Easy to Mount
Space Savings
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
170 m Ω
? 2011 IXYS CORPORATION, All Rights Reserved
DS99364F(07/11)
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