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参数资料
| 型号： | IXGQ50N60C4D1 |
| 厂商： | IXYS CORP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 90 A, 600 V, N-CHANNEL IGBT |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 198K |
| 代理商： | IXGQ50N60C4D1 |
2011 IXYS CORPORATION, All Rights Reserved
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
10
15
20
25
30
35
RG - Ohms
E
of
f-
M
illiJ
o
u
le
s
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
E
on
-
M
illiJ
o
u
le
s
Eoff
Eon - - - -
TJ = 125C , VGE = 15V
VCE = 400V
I C = 36A
I C = 72A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
90
95
100
105
110
115
120
125
130
135
10
15
20
25
30
35
RG - Ohms
tf
i-
N
ano
se
conds
100
150
200
250
300
350
400
450
500
550
td
(of
f) -
N
ano
se
co
nds
t f i
td(off) - - - -
TJ = 125C, VGE = 15V
VCE = 400V
I C = 36A
I C = 72A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
0.5
1
1.5
2
2.5
3
3.5
15
25
35
45
55
65
75
IC - Amperes
E
of
f-
M
illi
Jo
u
le
s
0
0.5
1
1.5
2
2.5
3
3.5
E
on
-
M
illiJ
o
u
le
s
Eoff
Eon - - - -
RG = 10 , VGE = 15V
VCE = 400V
TJ = 125C, 25C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
0.5
1
1.5
2
2.5
3
3.5
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
E
of
f-
M
illi
Jo
u
le
s
0
0.5
1
1.5
2
2.5
3
3.5
E
on
-
M
illiJ
o
u
le
s
Eoff
Eon - - - -
RG = 10 , VGE = 15V
VCE = 400V
I C = 36A
I C = 72A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
30
50
70
90
110
130
150
15
25
35
45
55
65
75
IC - Amperes
tf
i-
N
a
n
o
se
conds
120
160
200
240
280
320
360
td
(of
f) -
N
anos
e
conds
t f i
td(off) - - - -
RG = 10 , VGE = 15V
VCE = 400V
TJ = 25C, 125C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
50
60
70
80
90
100
110
120
130
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
tf
i-
N
anos
e
conds
160
180
200
220
240
260
280
300
320
td
(of
f) -
N
a
nos
econds
t f i
td(on) - - - -
RG = 10 , VGE = 15V
VCE = 400V
I C = 72A
I C = 36A
IXGQ50N60C4D1
IXGH50N60C4D1
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相关代理商/技术参数 |
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| IXGQ50N60Y4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) |
| IXGQ50N90Y4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 900V V(BR)CES | 50A I(C) |
| IXGQ75N100Y4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 75A I(C) |
| IXGQ75N50Y4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 500V V(BR)CES | 75A I(C) |
| IXGQ75N60Y4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) |
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