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参数资料
| 型号： | IXS839AQ2T/R |
| 厂商： | IXYS |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER SYNC BUCK 10QFN |
| 标准包装： | 2,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 24V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFQFN 裸露焊盘 |
| 供应商设备封装： | 10-QFN |
| 包装： | 带卷 (TR) |
IXYS
IXS839 / IXS839A / IXS839B
Synchronous Buck MOSFET Driver
Features:
? Logic Level Gate Drive Compatible
? 2A Source, 4A Sink Peak Drive Current
? Programmable High-Side Driver Turn-on Delay
? Supports Floating Voltage for Top Driver Up to
24V
? IXS839/839B: Undervoltage Lockout
? IXS839A/B: Output Shutdown, Low Side
Shutdown Inputs
? 10μA Shut Down Current
? 2mA Quiescent Current (Non- Switching)
? Bootstrapped High Side Driver
? Cross-Conduction Protection
Applications:
? Multiphase Desktop CPU Supplies
? Mobile CPU Core Voltage supplies
? High Current / Low Voltage DC/DC
Synchronous Buck Converters
Figure 1. IXS839 Functional Block Diagram
and General Application Circuit
General Description
The IXS839/IXS839A/IXS839B are 2A Source / 4A
Sink Synchronous Buck MOSFET Drivers. These
Synchronous Buck MOSFET Drivers are specifically
designed to drive two N-channel power MOSFETs
in a synchronous buck converter. The High-Side
driver is powered via a bootstrapped power
connection. The driver is capable of 20ns High-Side
output, and 18ns Low-Side output transition times
driving a 3000pF load.
The IXS839 and IXS839B incorporate an
undervoltage lockout to prevent unintentional gate
drive output during low voltage conditions. The
IXS83A/B include External Shutdown and Low-Side
Drive Shutdown features. Simultaneous shutdown
of both outputs prevents rapid output capacitor
discharge. The high-side turn-on delay is adjustable
with an external capacitor added at the DLY pin.
The IXS839/839A/839B are designed to operate
over a temperature range of -40°C to +85°C. The
IXS839 is available in an 8-Lead SOIC, the
IXS839A and the IXS839B in a 10-pin QFN.
Figure 2. IXS839A Functional Block Diagram
and General Application Circuit
5V
VIN
5V
VIN
4
VDD
8
VDD
UVLO
1
BST
DBST
3
BST
DBST
PWM
2
OVERLAP
PROTECTION
CIRCUIT
8
7
HGD
SW
CBST
Q1
VOUT
SD
PWM
4
5
OVERLAP
PROTECTION
CIRCUIT
2
1
HGD
SW
CBST
Q1
VOUT
DLY
3
DLY
7
CDLY
5
6
LGD
PGND
Q2
CDLY
9
10
LGD
PGND
Q2
Copyright ? IXYS CORPORATION 2004
LSD
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXS839BQ2 | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXS839BQ2T/R | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXS839S1 | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXS839S1T/R | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXSA10N60B2D1 | 功能描述:IGBT 晶体管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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