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参数资料
| 型号： | IXS839AQ2T/R |
| 厂商： | IXYS |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER SYNC BUCK 10QFN |
| 标准包装： | 2,000 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 24V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-VFQFN 裸露焊盘 |
| 供应商设备封装： | 10-QFN |
| 包装： | 带卷 (TR) |
IXYS
IXS839 / IXS839A / IXS839B
Figure 3. IXS839B Functional Block Diagram and General Application Circuit
5V
VIN
5
VDD
DBST
UVLO
10
BST
SD
9
HGD
Q1
1
OVERLAP
PWM
2
PROTECTION
CIRCUIT
8
SW
CBST
VOUT
DLY
4
CDLY
3
LSD
Ordering Information
6
7
LGD
PGND
Q2
Part No.
Description
Package
Pack Quantity
IXS839S1
Under Voltage Lockout
8-Pin SOIC
98
(Tube)
IXS839S1T/R
IXS839AQ2
IXS839AQ2T/R
IXS839BQ2
IXS839BQ2T/R
Under Voltage Lockout
Driver Shutdown, Low Side Shutdown
Driver Shutdown, Low Side Shutdown
Under Voltage Lockout , Driver Shutdown, Low Side Shutdown
Under Voltage Lockout , Driver Shutdown, Low Side Shutdown
8-Pin SOIC
10-Pin QFN
10-Pin QFN
10-Pin QFN
10-Pin QFN
2500 (Tape & Reel)
121 (Tube)
2000 (Tape & Reel)
121 (Tube)
2000 (Tape & Reel)
Absolute Maximum Ratings
Parameter
V DD
BST
BST to SW
SW
PWM
Operating Ambient Temp Range
Operating Junction Temp Range
θ JA
θ JC
Storage Temp Range
Lead Temperature (Soldering, 10 sec)
Rating
-0.3V to +7V
-0.3V to +30V
-0.3V to +7V
-0.2V to +24V
-0.3V to +7V
-40°C to +85°C
-40°C to +125°C
150°C/W
40°C/W
-65°C to +150°C
+300°C
Absolute Maximum Ratings are stress ratings.
Stresses in excess of these ratings can cause
permanent damage to the device. Functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this data sheet is not implied. Exposure
of the device to the absolute maximum ratings for
an extended period may degrade the device and
affect its reliability.
ESD Warning
ESD (electrostatic discharge) sensitive device. Electrostatic charges can readily accumulate on test equipment and the human body
in excess of 4000 Volts. This energy can discharge without detection. Although the IXS839/839A/839B feature proprietary ESD
protection circuitry, permanent damage may be sustained if subjected to high energy electrostatic discharges. Proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXS839BQ2 | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXS839BQ2T/R | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXS839S1 | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXS839S1T/R | 功能描述:功率驱动器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXSA10N60B2D1 | 功能描述:IGBT 晶体管 10 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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