参数资料
型号: IXTA130N10T-TRL
厂商: IXYS
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 100V 130A TO263
标准包装: 800
系列: TrenchMV™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 130A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.1 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 104nC @ 10V
输入电容 (Ciss) @ Vds: 5080pF @ 25V
功率 - 最大: 360W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263
包装: 带卷 (TR)
TrenchMV TM
Power MOSFET
IXTA130N10T
IXTP130N10T
V DSS =
I D25 =
R DS(on) ≤
100V
130A
9.1m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
G
S
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
100
100
± 30
V
V
V
TO-220 (IXTP)
(TAB)
D
I D25
I LRMS
I DM
I A
E AS
P D
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
130
75
350
65
500
360
A
A
A
A
mJ
W
G
G = Gate
S = Source
S
(TAB)
D = Drain
TAB = Drain
T J
T JM
T stg
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-220
TO-263
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
3.0
2.5
° C
° C
° C
° C
° C
Nm/lb.in.
g
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
Applications
BV DSS
V GS = 0V, I D = 250 μ A
100
V
Automotive
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 150 ° C
2.5
4.5
± 200
5
250
V
nA
μ A
μ A
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
R DS(on)
V GS = 10V, I D = 25A, Notes 1, 2
9.1
m Ω
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
? 2008 IXYS CORPORATION, All rights reserved
DS99649B(07/08)
相关PDF资料
PDF描述
IXTA130N10T7 MOSFET N-CH 100V 130A TO-263-7
IXTA152N085T7 MOSFET N-CH 85V 152A TO-263-7
IXTA152N085T MOSFET N-CH 85V 152A TO-263
IXTA160N04T2 MOSFET N-CH 40V 160A D2PAK
IXTA160N075T7 MOSFET N-CH 75V 160A TO-263-7
相关代理商/技术参数
参数描述
IXTA140P05T 功能描述:MOSFET -140 Amps -50V 0.008 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA14N60P 功能描述:MOSFET 14.0 Amps 600 V 0.55 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA152N085T 功能描述:MOSFET 152 Amps 85V 6.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA152N085T7 功能描述:MOSFET 152 Amps 85V 6.6 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA15N50L2 制造商:IXYS Corporation 功能描述:MOSFET N-CH 500V 15A T0-263