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参数资料
| 型号： | IXTA76N25T |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 250V 76A TO-263 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 250V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 92nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 460W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 管件 |
Preliminary Technical Information
Trench Gate
Power MOSFET
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
V DSS =
I D25 =
R DS(on) ≤
250V
76A
39m Ω
N-Channel Enhancement Mode
Typical avalanche BV = 300V
TO-263 (I XTA )
TO-247 (I XTH )
TO-262 (I XTI )
TO-220 (I XTP )
G
S
(TAB)
G
D
S
(TAB)
G
D
S
(TAB)
G
DS
(TAB)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
250
250
V
V
TO-3P (IXTQ)
V GSM
I D25
I DM
I AS
E AS
Transient
T C = 25 ° C *
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 30
76
170
8
1.5
V
A
A
A
J
G
D
S
(TAB)
P D
T J
T JM
T stg
T L
T C = 25 ° C
1.6mm (0.062in.) from case for 10s
Plastic body for 10seconds
460
-55 ... +150
150
-55 ... +150
300
260
W
° C
° C
° C
° C
° C
G = Gate D = Drain
S = Source TAB = Drain
Features
International standard packages
M d
F C
Mounting Torque TO-220,TO-3P,TO247 1.13 / 10
Mounting Force TO-262,TO-263 10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
Avalanche rated
Low package inductance
- easy to drive and to protect
Weight
TO-262,TO-263
2.5
g
TO-220
TO-3P
TO-247
3.0
5.5
6.0
g
g
g
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ . Max.
Applications
BV DSS
V GS(th)
V GS = 0V, I D = 1mA
V GS = 0V, I D = 10A
V DS = V GS , I D = 1mA
250
3
300
5
V
V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
DC choppers
AC motor control
I DSS
V DS = V DSS
V GS = 0V
T J = 125 ° C
2 μ A
200 μ A
Uninterruptible power supplies
High speed power switching
applications
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
39 m Ω
? 2007 IXYS CORPORATION, All rights reserved
DS99663C(10/07)
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相关代理商/技术参数 |
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|---|---|
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| IXTA80N10T | 功能描述:MOSFET 80 Amps 100V 13.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTA80N10T7 | 功能描述:MOSFET 80 Amps 100V 13.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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