参数资料
型号: IXTH110N25T
厂商: IXYS
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 250V 110A TO-247
产品目录绘图: TO-247AD 3-Leads
标准包装: 30
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 250V
电流 - 连续漏极(Id) @ 25° C: 110A
开态Rds(最大)@ Id, Vgs @ 25° C: 24 毫欧 @ 55A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 1mA
闸电荷(Qg) @ Vgs: 157nC @ 10V
输入电容 (Ciss) @ Vds: 9400pF @ 25V
功率 - 最大: 694W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
Trench TM
Power MOSFETs
IXTH110N25T
IXTV110N25TS
V DSS
I D25
R DS(on)
= 250V
= 110A
≤ 24m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-247 (IXTH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
250
V
G
D
S
D (Tab)
V DGR
T J = 25 ° C to 150 ° C, R GS = 1M Ω
250
V
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
110
V
V
A
PLUS220SMD(IXTV_S)
I L(RMS)
I DM
I A
E AS
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
75
300
25
1
A
A
A
J
G
S
D (Tab)
P D
dv/dt
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150°C
694
10
W
V/ns
G = Gate
S = Source
D = Drain
Tab = Drain
T J
T JM
-55 to +150
+150
° C
° C
T stg
T L
T SOLD
M d
F C
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (to-247)
Mounting force (PLUS220SMD)
TO-247
PLUS220SMD
-55 to +150
300
260
1.13/10
11..65/2.5..14.6
6
4
° C
° C
° C
Nm/lb.in.
N/lb.
g
g
Features
International Standard Packages
Avalanche Rated
High Current Handling Capability
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
Easy to Mount
Space Savings
BV DSS
V GS = 0V, I D = 250 μ A
250
V
High Power Density
V GS(th)
V DS = V GS , I D = 1mA
3.0
5.0
V
I GSS
V GS = ± 20V, V DS = 0V
± 200
nA
Applications
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 125 ° C
V GS = 10V, I D = 0.5 ? I D25 , Notes 1, 2
5 μ A
250 μ A
24 m Ω
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
? 2012 IXYS CORPORATION, All Rights Reserved
DS99904B(05/12)
相关PDF资料
PDF描述
IXFV30N50P MOSFET N-CH 500V 30A PLUS220
IXTP15N50L2 MOSFET N-CH 15A 500V TO-220
353S3S2 CABLE R/A FEMALE-FEMALE 3POS 2M
483P3P72 CABLE STR MALE-R/A MALE 3POS 6'
OPB490N11 SWITCH PHOTOLOGIC SLOTTD OPTICAL
相关代理商/技术参数
参数描述
IXTH11N100 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-218VAR
IXTH11N80 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:MegaMOSFET
IXTH11N90 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | TO-218VAR
IXTH11N95 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 11A I(D) | TO-218VAR
IXTH11P45 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 11A I(D) | TO-218VAR