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参数资料
| 型号： | IXTH13N80 |
| 厂商： | IXYS |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 800V 13A TO-247 |
| 标准包装： | 30 |
| 系列： | MegaMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 800V |
| 电流 - 连续漏极(Id) @ 25° C： | 13A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 800 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 170nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 4500pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247AD |
| 包装： | 管件 |
V DSS
I D25
R DS(on)
MegaMOS TM FET
N-Channel Enhancement Mode
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
11 A 0.95 ?
13 A 0.80 ?
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
800
800
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
D (TAB)
I D25
I DM
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
11N80
13N80
11N80
11
13
44
A
A
A
TO-204 AA (IXTM)
13N80
52
A
P D
T C = 25 ° C
300
W
T J
T JM
-55 ... +150
150
° C
° C
G
T stg
-55 ... +150
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
M d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
° C
q
q
International standard packages
Low R DS (on) HDMOS TM process
q
q
q
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
q
power supplies
V DSS
V GS(th)
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 250 μ A
800
2
4.5
V
V
q
q
q
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
Easy to mount with 1 screw (TO-247)
I DSS
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
250
1
μ A
mA
Advantages
q
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s,
11N80
13N80
0.95
0.80
?
?
q
q
(isolated mounting screw hole)
Space savings
High power density
I XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
915380F (5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
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相关代理商/技术参数 |
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| IXTH13N90 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH13P15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH13P20 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH13P25 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-218VAR |
| IXTH140P05T | 功能描述:MOSFET -140 Amps -50V 0.008 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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