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| 型号： | IXTH220N055T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 220A TO-247 |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 220A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 158nc @ 10V |
| 输入电容 (Ciss) @ Vds： | 7200pF @ 25V |
| 功率 - 最大： | 430W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTH220N055T
IXTQ220N055T
Symbol
Test Conditions
Characteristic Values
TO-247 AD Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
V DS = 10 V; I D = 60 A, Note 1
75
120
7200
S
pF
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
1270
pF
1
2
3
C rss
285
pF
t d(on)
t r
t d(off)
Resistive Switching Times
V GS = 10 V, V DS = 30 V, I D = 25 A
R G = 5 ? (External)
36
62
53
ns
ns
ns
t f
Q g(on)
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
53
158
42
46
ns
nC
nC
nC
0.35 ° C/W
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
2 - Drain
Tab - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
R thCH
0.25
° C/W
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
.016 .031
Source-Drain Diode
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
e 5.20 5.72
L 19.81 20.32
L1 4.50
0.205 0.225
.780 .800
.177
I S
I SM
V SD
t rr
V GS = 0 V
Pulse width limited by T JM
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
70
220
600
1.0
A
A
V
ns
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
TO-3P (IXTQ) Outline
.140 .144
0.232 0.252
.170 .216
242 BSC
V R = 25 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
相关PDF资料 |
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| IXTH24N50L | MOSFET N-CH 500V 24A TO-247 |
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相关代理商/技术参数 |
参数描述 |
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| IXTH220N075T | 功能描述:MOSFET 220 Amps 75V 3.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH22N50P | 功能描述:MOSFET 22 Amps 500V 0.27 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IXTH22P20 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-218VAR |
| IXTH230N085T | 功能描述:MOSFET 230 Amps 85V 4.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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