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| 型号： | IXTH48P20P |
| 厂商： | IXYS |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 200V 48A TO-247 |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| 系列： | PolarP™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 103nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5400pF @ 25V |
| 功率 - 最大： | 462W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
Preliminary Technical Information
PolarP TM
Power MOSFET
IXTH48P20P
IXTT48P20P
V DSS
I D25
R DS(on)
=
=
≤
- 200V
- 48A
85 m Ω
P-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
Test Conditions
T J = 25 ° C to 150 ° C
Maximum Ratings
- 200
V
G
D
S
(TAB)
V DGR
T J = 25 ° C to 150 ° C, R GS = 1M Ω
- 200
V
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
TO-268 (IXTT)
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
- 48
-144
- 48
A
A
A
G
S
(TAB)
E AS
dV/dt
P D
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
2.5
10
462
J
V/ns
W
G = Gate
S = Source
D = Drain
TAB = Drain
T J
T JM
T stg
T L
T SOLD
M d
F C
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
Mounting force (PLUS220)
TO-247
TO-268
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
11..65 / 2.5..14.6
6
5
° C
° C
° C
° C
° C
Nm/lb.in.
N/lb.
g
g
Features:
International standard packages
Avalanche Rated
Rugged PolarP TM process
Low package inductance
- easy to drive and to protect
Applications:
High side switching
Push-pull amplifiers
DC Choppers
Current regulators
Automatic test equipment
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Advantages:
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = - 250 μ A
V DS = V GS , I D = - 250 μ A
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V
V GS = -10V, I D = 0.5 ? I D25 , Note 1
T J = 125 ° C
- 200
- 2.5
V
- 4.5 V
± 100 nA
- 25 μ A
- 200 μ A
85 m Ω
Low gate charge results in simple
drive requirement
High power density
Fast switching
Easy to parallel
? 2008 IXYS CORPORATION, All rights reserved
DS99981(6/08)
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