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参数资料
| 型号： | IXTH6N50D2 |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 500V 6A TO247 |
| 产品目录绘图： | TO-247AD 3-Leads |
| 标准包装： | 30 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 耗尽模式 |
| 漏极至源极电压(Vdss)： | 500V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 毫欧 @ 3A，0V |
| 闸电荷(Qg) @ Vgs： | 96nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2800pF @ 25V |
| 功率 - 最大： | 300W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
IXTA6N50D2 IXTP6N50D2
IXTH6N50D2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
V DS = 30V, I D = 3A, Note 1
V GS = -10V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = ± 5V, V DS = 250V, I D = 3A
R G = 2.4 Ω (External)
2.8
4.5
2800
255
64
28
72
82
43
S
pF
pF
pF
ns
ns
ns
ns
Q g(on)
Q gs
V GS = 5V, V DS = 250V, I D = 3A
96
11
nC
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
Q gd
48
nC
R thJC
R thCS
TO-220
TO-247
0.50
0.21
0.41 ° C/W
° C/W
° C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol
Test Conditions
Min. Typ. Max.
SOA
V DS = 400V, I D = 0.45A, T C = 75 ° C, Tp = 5s
180
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
V SD
t rr
I RM
Q RM
I F = 6A, V GS = -10V, Note 1
I F = 3A, -di/dt = 100A/ μ s
V R = 100V, V GS = -10V
0.8
350
16
2.8
1.3
V
ns
A
μ C
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
TO-263 Outline
Dim.
A
Millimeter
Min. Max.
4.06 4.83
Inches
Min. Max.
.160 .190
1 = Gate
2 = Drain
3 = Source
b
b2
c
c2
D
D1
E
0.51
1.14
0.40
1.14
8.64
8.00
9.65
0.99
1.40
0.74
1.40
9.65
8.89
10.41
.020
.045
.016
.045
.340
.280
.380
.039
.055
.029
.055
.380
.320
.405
1.
2.
3.
4.
Gate
Drain
Source
Drain
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100
.575
.090
.040
.050
.320
BSC
.625
.110
.055
.070
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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| IXTH6N80A | 功能描述:MOSFET 6 Amps 800 V 1.4 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH6N90 | 功能描述:MOSFET 6 Amps 900V 1.8 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH6N90A | 功能描述:MOSFET 6 Amps 900V 1.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTH72N20 | 功能描述:MOSFET 72 Amps 200V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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