参数资料
型号: IXTP152N085T
厂商: IXYS
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 85V 152A TO-220
产品目录绘图: TO-220, TO-251
标准包装: 50
系列: TrenchMV™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 85V
电流 - 连续漏极(Id) @ 25° C: 152A
开态Rds(最大)@ Id, Vgs @ 25° C: 7 毫欧 @ 25A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 114nC @ 10V
输入电容 (Ciss) @ Vds: 5500pF @ 25V
功率 - 最大: 360W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA152N085T
IXTP152N085T
V DSS
I D25
R DS(on)
= 85 V
= 152 A
≤ 7.0 m ?
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (IXTA)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
85
85
V
V
V GSM
Transient
± 20
V
G
S
I D25
I LRMS
I DM
I AR
E AS
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
152
75
410
25
750
A
A
A
A
mJ
TO-220 (IXTP)
(TAB)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 ?
3
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
360
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
M d
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-220)
300 ° C
260 ° C
1.13 / 10 Nm/lb.in.
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Weight
TO-220
TO-263
3
2.5
g
g
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
Applications
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150 ° C
V GS = 10 V, I D = 25 A, Notes 1, 2
85
2.0
5.8
4.0
± 200
25
250
7.0
V
V
nA
μ A
μ A
m ?
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
? 2006 IXYS CORPORATION All rights reserved
DS99532 (11/06)
相关PDF资料
PDF描述
ZXMP10A18KTC MOSFET P-CHAN 100V DPAK
AMB340204 SENSOR REFL LONG H TYPE W/OSC
AMB3402 SENSOR REFL LONG H TYPE W/OSC
AMB240207 SENSOR REFL MIDDLE H-TYPE OSC
AMB240206 SENSOR REFL MIDDLE H-TYPE OSC
相关代理商/技术参数
参数描述
IXTP15N20T 功能描述:MOSFET 15 Amps 200V 180 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP15N25MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5)
IXTP15N25MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5)
IXTP15N30MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5)
IXTP15N30MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5)