- 您现在的位置：买卖IC网 > PDF目录18776 > IXTP152N085T (IXYS)MOSFET N-CH 85V 152A TO-220 PDF资料下载
参数资料
| 型号： | IXTP152N085T |
| 厂商： | IXYS |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 85V 152A TO-220 |
| 产品目录绘图： | TO-220, TO-251 |
| 标准包装： | 50 |
| 系列： | TrenchMV™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 85V |
| 电流 - 连续漏极(Id) @ 25° C： | 152A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7 毫欧 @ 25A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 114nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5500pF @ 25V |
| 功率 - 最大： | 360W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220 |
| 包装： | 管件 |
IXTA152N085T
IXTP152N085T
Symbol
Test Conditions
Characteristic Values
TO-263AA (IXTA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
t d(on)
t r
V DS = 10 V; I D = 60 A, Note 1
V GS = 0 V, V DS = 25 V, f = 1 MHz
Resistive Switching Times
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
60
100
5500
720
150
30
50
S
pF
pF
pF
ns
ns
t d(off)
t f
R G = 5 ? (External)
50
45
ns
ns
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 25 A
114
30
35
nC
nC
nC
Dim.
A
A1
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
Inches
Min. Max.
.160 .190
.080 .110
R thJC
R thCH
TO-220
0.50
0.42 ° C/W
° C/W
b
b2
c
c2
D
0.51
1.14
0.46
1.14
8.64
0.99
1.40
0.74
1.40
9.65
.020
.045
.018
.045
.340
.039
.055
.029
.055
.380
D1
E
7.11
9.65
8.13
10.29
.280
.380
.320
.405
Source-Drain Diode
E1
e
6.86
2.54
8.13
BSC
.270
.100
.320
BSC
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
L
L1
L2
14.61
2.29
1.02
15.88
2.79
1.40
.575
.090
.040
.625
.110
.055
I S
V GS = 0 V
152
A
L3
L4
R
1.27
0
0.46
1.78
0.38
0.74
.050
0
.018
.070
.015
.029
I SM
Pulse width limited by T JM
410
A
V SD
t rr
I F = 25 A, V GS = 0 V, Note 1
I F = 25 A, -di/dt = 100 A/ μ s
90
1.0
V
ns
TO-220AB (IXTP) Outline
V R = 40 V, V GS = 0 V
Notes: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %;
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6771478 B2
7,063,975 B2
7,071,537
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMP10A18KTC | MOSFET P-CHAN 100V DPAK |
| AMB340204 | SENSOR REFL LONG H TYPE W/OSC |
| AMB3402 | SENSOR REFL LONG H TYPE W/OSC |
| AMB240207 | SENSOR REFL MIDDLE H-TYPE OSC |
| AMB240206 | SENSOR REFL MIDDLE H-TYPE OSC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXTP15N20T | 功能描述:MOSFET 15 Amps 200V 180 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IXTP15N25MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) |
| IXTP15N25MB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) |
| IXTP15N30MA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) |
| IXTP15N30MB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) |
发布紧急采购，3分钟左右您将得到回复。